Datasheet > FDP3682

FDP3682

更新时间： 2024-09-16 11:14:23

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
16页	453K
描述
N 沟道，PowerTrench® MOSFET，100V，32A，36mΩ

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FDP3682 数据手册

DATA SHEET

www.onsemi.com

MOSFET – N-Channel,

POWERTRENCH^ꢀ

100 V, 32 A, 36 mW

FDB3682, FDP3682

D2PAK−3

(TO−263, 3−LEAD)

TO−220−3LD

CASE 340AT

Features

CASE 418AJ

• R

• Q

= 32 mW (Typ.) @ V = 10 V, I = 32 A

GS D

DS(on)

G(tot)

= 18.5 nC (Typ.) @ V = 10 V

• Low Miller Charge

MARKING DIAGRAM

• Low Q Body Diode

• UIS Capability (Single Pulse and Repetitive Pulse)

• These Devices are Pb−Free and are RoHS Compliant

XXXXXXXG

AYWW

Applications

• Consumer Appliances

• Synchronous Rectification

• Battery Protection Circuit

• Motor Drives and Uninterruptible Power Supplies

• Micro Solar Inverter

XXXXXX = Specific Device Code

(FDB3862 or FDP3862)

= Assembly Location

= Year

= Work Week

= Pb−Free Package

MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)

FDB3682 /

FDP3682

Symbol

Parameter

Drain to Source Voltage

Gate to Source Voltage

Unit

DSS

100

SCHEMATIC

Drain

Current

Continuous

(T = 25°C, V = 10 V)

Continuous

(T = 100°C, V = 10 V)

Continuous (T

= 25°C,

= 43°C/W)

amb

= 10 V, R

Pulsed

Figure 4

ORDERING INFORMATION

See detailed ordering and shipping information on page 13 of

this data sheet.

Single Pulse Avalanche Energy (Note 1)

Power Dissipation

Derate above 25°C

0.63

mW/°C

°C

T , T

Operating and Storage Temperature

–55 to 175

STG

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Starting T = 25°C, L = 0.27 mH, I = 20 A.

Publication Order Number:

March, 2022 − Rev. 3

FDP3682/D

12 3 4 5 6 7...16

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