Datasheet > FDN337N-F169

FDN337N-F169

更新时间： 2024-11-14 11:14:27

品牌	Logo	应用领域
安森美 - ONSEMI		晶体管场效应晶体管
页数	文件大小	规格书
6页	260K
描述
N 沟道，逻辑电平增强型场效应晶体管，30V，2.2A，65mΩ

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FDN337N-F169 数据手册

DATA SHEET

www.onsemi.com

Transistor - N-Channel,

Logic Level, Enhancement

Mode Field Effect

FDN337N

General Description

SUPERSOTt−3 N−Channel logic level enhancement mode power

field effect transistors are produced using onsemi’s proprietary, high

cell density, DMOS technology. This very high density process is

especially tailored to minimize on−state resistance. These devices are

particularly suited for low voltage applications in notebook

computers, portable phones, PCMCIA cards, and other battery

powered circuits where fast switching, and low in−line power loss are

needed in a very small outline surface mount package.

SOT−23−3

CASE 527AG

MARKING DIAGRAM

&E&Y

618&E&G

Features

• 2.2 A, 30 V

♦ R

= 0.065 ꢀ @ V = 4.5 V

DS(on)

618

= Designates Space

= 0.082 ꢀ @ V = 2.5 V

DS(on)

= Binary Calendar Year Coding Scheme

= Specific Device Code

= Date Code

• Industry Standard Outline SOT−23 Surface Mount Package Using

Proprietary SUPERSOT−3 Design for Superior Thermal and

Electrical Capabilities

ORDERING INFORMATION

• High Density Cell Design for Extremely Low R

DS(on)

• Exceptional on−Resistance and Maximum DC Current Capability

• This Device is Pb−Free and Halogen Free

†

Device

FDN337N

Package

Shipping

SOT−23−3

(Pb−Free)

3000 /

Tape & Reel

ABSOLUTE MAXIMUM RATINGS

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

T = 25°C unless otherwise noted.

Symbol

Parameter

Ratings

Unit

Drain−Source Voltage

DSS

GSS

Gate−Source Voltage − Continuous

Drain/Output Current – Continuous

Drain/Output Current – Pulsed

Maximum Power Dissipation (Note 1a)

Maximum Power Dissipation (Note 1b)

2.2

0.5

0.46

T , T

Operating and Storage Temperature

Range

−55 to +150

°C

STG

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

T = 25°C unless otherwise noted.

Symbol

Parameter

Ratings

Unit

Thermal Resistance,

Junction−to−Ambient (Note 1a)

250

°C/W

ꢁ

Thermal Resistance,

Junction−to−Case (Note 1)

°C/W

ꢁ

Publication Order Number:

March, 2022 − Rev. 4

FDN337N/D

12 3 4 5 6

中文翻译

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与FDN337N-F169相关器件

型号	品牌	获取价格	描述	数据表
FDN337NL99Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 2.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal
FDN338	FAIRCHILD	获取价格	P-Channel Logic Level Enhancement Mode Field Effect Transistor
FDN338P	FAIRCHILD	获取价格	P-Channel Logic Level Enhancement Mode Field Effect Transistor
FDN338P	TYSEMI	获取价格	SuperSOT-3
FDN338P	HTSEMI	获取价格	20 V P-Channel Enhancement Mode MOSFET
FDN338P	ONSEMI	获取价格	P 沟道，2.5V 指定，PowerTrench™ MOSFET，-20V，-1.6A，1
FDN338P	UMW	获取价格	漏源电压（Vdss）:-20V;持续漏极电流（Id）（在25°C时）:-2.8A;栅极-源
FDN338P	HOTTECH	获取价格	SOT-23
FDN338P_NL	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 1.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal
FDN338PL99Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 1.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal

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