FDN340

更新时间： 2024-09-26 22:31:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	274K
描述
Single P-Channel, Logic Level, PowerTrench MOSFET

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数据手册

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FDN340 数据手册

December 1999

FDN340P

Single P-Channel, Logic Level, PowerTrench^ÒMOSFET

General Description

Features

This P-Channel Logic Level MOSFET is produced

using Fairchild Semiconductor advanced Power Trench

process that has been especially tailored to minimize

the on-state resistance and yet maintain low gate

charge for superior switching performance.

–2 A, 20 V.

R_DS(ON)= 0.07 W @ V _GS= –4.5 V

R_DS(ON)= 0.11 W @ V _GS= –2.5 V.

R_DS(ON)= 0.210 W @ V _GS= –1.8 V.

· Low gate charge (8nC typical).

These devices are well suited for portable electronics

applications: Load switching and power management,

battery charging circuits, and DC/DC conversion.

· High performance trench technology for extremely

low R_DS(ON)

· High power version of industry Standard SOT-23

package. Identical pin-out to SOT-23 with 30%

higher power handling capability.

SuperSOT -3

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

Parameter

Ratings

Units

V_DSS

Drain-Source Voltage

–20

V_GSS

I_D

Gate-Source Voltage

±8

–2

Drain Current – Continuous

– Pulsed

(Note 1a)

–10

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

0.5

P_D

0.46

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

°C/W

R_qJA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1)

250

R_qJC

Thermal Resistance, Junction-to-Case

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

340

FDN340P

7’’

8mm

3000 units

Ó1999 Fairchild Semiconductor Corporation

FDN340P Rev C (W)

12 3 4 5 6 7 8

中文翻译

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