Datasheet > FDN338P

FDN338P

更新时间： 2024-11-16 18:09:43

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
5页	524K
描述
SOT-23

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中文翻译

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FDN338P 数据手册

FDN338P

LOW VOLTAGE MOSFET (P-CHANNEL)

FEATURES

 V_DS=-20V,R_DS(ON)≤115mΩ@V_GS=-4.5V,I_D=-1.6A

 High Density Cell Design For Ultra Low On-Resistance

 Advanced trench process technology

 Surface Mount device

SOT-23

MECHANICAL DATA



Case: SOT-23

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.008 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-Source Voltage

Symbol

Limit

-20

Unit

V_DS

V_GS

I_D

±8

Gate-Source Voltage

-1.6

-5

Continuous Drain Current

Pulsed Drain Current ¹⁾

Maximum Power Dissipation²⁾

I_DM

P_D

0.5

^oC

T_J, T_stg

-55 to 150

Operating Junction and Storage Temperature Range

Junction-to-Ambient Thermal Resistance (PCB mounted) ²⁾

100

166

^oC/W

R_thJA

Junction-to-Ambient Thermal Resistance (PCB mounted) ³⁾

Notes

¹⁾Pulse width limited by maximum junction temperature.

Surface Mounted on FR4 Board, t

Surface Mounted on FR4 Board.

≤ 5 sec.

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Symbo

Min.

Parameter

Test Condition

Typ.

Max.

Unit

Static

BV_DSS

R _DS(on)

V_GS(th)

V_GS= 0V, I_D= -250uA

V_GS= -4.5V, I_D= -1.6A

V_GS= -2.5V, I_D= -1.3A

V_DS=V_GS, I_D= -250uA

V_DS= -16V, V _GS= 0V

V_GS= ± 8V, V_DS= 0V

V_DS= -5V, I_D= -2.8A

Drain-Source Breakdown Voltage

Drain-Source On-State Resistance¹⁾

-20

115

160

mΩ

116

Gate Threshold Voltage

Zero Gate Voltage Drain Current

-0.42

-1.5

-1

I^DSS

I_GSS

g_fs

Gate Body Leakage

Forward Transconductance¹⁾

Dynamic

±100

6.5

Q_g

Q_gs

Q_gd

t_d(on)

Total Gate Charge

5.8

0.85

1.7

Gate-Source Charge

Gate-Drain Charge

V_DS= -6V, I_D-2.8A

= -4.5V

V_GS

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

V_DD= -6V, RL=6Ω

t_r

t_d(off)

I_D÷-1.A, V

_GEN= -4.5V = 6Ω

R_G

t_f

C_iss

C_oss

C_rss

Input Capacitance

415

223

= 1. MHz

Output Capacitance

Reverse Transfer Capacitance

Source-Drain Diode

Max. Diode Forward Current

Diode Forward Voltage

V_DS= -6V, V_GS= 0V f

I_S

-1.6

-1.2

V_SD

I_S= -1.6A, V_GS= 0V

-0.8

* Pulse test ; Pulse width ≤300µs, Duty cycle ≤ 0.5% .

1 / 5

E-mail:hkt@heketai.com

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与FDN338P相关器件

型号	品牌	获取价格	描述	数据表
FDN338P_NL	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 1.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal
FDN338PL99Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 1.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal
FDN338PS62Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 1.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal
FDN338P-T/R	ONSEMI	获取价格	Small Signal Field-Effect Transistor, 1.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal
FDN339AN	TYSEMI	获取价格	SuperSOT-3
FDN339AN	FAIRCHILD	获取价格	N-Channel 2.5V Specified PowerTrench MOSFET
FDN339AN	ONSEMI	获取价格	N 沟道，2.5V 指定，PowerTrench® MOSFET，20V，3A，35mΩ
FDN339AN	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:20V;持续漏极电流（Id）（在25°C时
FDN339AND87Z	ONSEMI	获取价格	Small Signal Field-Effect Transistor, 3A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-o
FDN340	FAIRCHILD	获取价格	Single P-Channel, Logic Level, PowerTrench MOSFET

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