FDN338

更新时间： 2024-09-26 22:31:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	88K
描述
P-Channel Logic Level Enhancement Mode Field Effect Transistor

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中文翻译

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数据手册

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FDN338 数据手册

March 1998

FDN338P

P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description

Features

SuperSOT^TM-3 P-Channel logic level enhancement mode

power field effect transistors are produced using Fairchild's

proprietary, high cell density, DMOS technology. This very

high density process is especially tailored to minimize

on-state resistance. These devices are particularly suited for

low voltage applications in notebook computers, portable

phones, PCMCIA cards, and other battery powered circuits

where fast switching, and low in-line power loss are needed

in a very small outline surface mount package.

-1.6 A, -20 V, R_DS(ON)= 0.13 W @ V_GS= -4.5 V

R_DS(ON)= 0.18 W @ V_GS= -2.5 V.

Industry standard outline SOT-23 surface mount

package using proprietary SuperSOT^TM-3 design for

superior thermal and electrical capabilities.

High density cell design for extremely low R_DS(ON)

Exceptional on-resistance and maximum DC current

capability.

SuperSOT^TM-3

SuperSOT^TM-8

SuperSOT^TM-6

SOIC-16

SO-8

SOT-223

SuperSOT^TM-3

Absolute Maximum Ratings T_A= 25^oC unless other wise noted

Symbol Parameter

FDN338P

-20

Units

V_DSS

V_GSS

I_D

Drain-Source Voltage

Gate-Source Voltage - Continuous

±8

Drain/Output Current - Continuous

- Pulsed

-1.6

-5

Maximum Power Dissipation

(Note 1a)

(Note 1b)

0.5

°C

P_D

0.46

T_J,T_STG

Operating and Storage Temperature Range

-55 to 150

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient (Note 1a)

Thermal Resistance, Junction-to-Case

250

°C/W

R_q_JA

R_q_JC

(Note 1)

FDN338P Rev.D

12 3 4

中文翻译

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与FDN338相关器件

型号	品牌	获取价格	描述	数据表
FDN338P	FAIRCHILD	获取价格	P-Channel Logic Level Enhancement Mode Field Effect Transistor
FDN338P	TYSEMI	获取价格	SuperSOT-3
FDN338P	HTSEMI	获取价格	20 V P-Channel Enhancement Mode MOSFET
FDN338P	ONSEMI	获取价格	P 沟道，2.5V 指定，PowerTrench™ MOSFET，-20V，-1.6A，1
FDN338P	UMW	获取价格	漏源电压（Vdss）:-20V;持续漏极电流（Id）（在25°C时）:-2.8A;栅极-源
FDN338P	HOTTECH	获取价格	SOT-23
FDN338P_NL	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 1.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal
FDN338PL99Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 1.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal
FDN338PS62Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 1.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal
FDN338P-T/R	ONSEMI	获取价格	Small Signal Field-Effect Transistor, 1.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal