Datasheet > FDN339AN

FDN339AN

更新时间： 2024-09-28 17:15:47

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
5页	439K
描述
种类:N-Channel;漏源电压（Vdss）:20V;持续漏极电流（Id）（在25°C时）:3A;Vgs(th)(V):±8;漏源导通电阻:mΩ@10V;漏源导通电阻:35mΩ@4.5V

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FDN339AN 数据手册

FDN339

UMW

N-Channel 2.5 V (D-S) MOSFET

SOT–23

General Description

This N-Channel 2.5V specified MOSFET is has

been especially tailored to minimize the on-state

resistance and yet maintain low gate charge for superior

switching performance.

Applications

1. GATE

DC/DC converter

Load switch

2. SOURCE

3. DRAIN

Features

VDS (V) = 20V

RDS(ON)

38m

50m

(V GS = 4.5V)

(V GS = 2.5V)

Absolute Maximum Ratings ^T_A^{= 25°C unless otherwise noted}

Symbol

Parameter

Ratings

Units

V_DSS

V_GSS

I_D

Drain-Source Voltage

Gate-Source Voltage

Drain Current - Continuous

- Pulsed

(Note 1a)

0.5

P_D

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

0.46

T_J, T_stg

Operating and Storage Junction Temperature Range

-55 to +150

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

250

R_θ

(Note 1a)

(Note 1)

C/W

Thermal Resistance, Junction-to-Case

R_θ

www.umw-ic.com

UTD Semiconductor Co.,Limited

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