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FDMS86201

更新时间： 2024-11-14 11:16:07
品牌 Logo 应用领域
安森美 - ONSEMI PC开关脉冲光电二极管晶体管
页数 文件大小 规格书
8页 456K
描述
N 沟道屏蔽门极 PowerTrench® MOSFET 120V，49A，11.5mΩ

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中文翻译

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FDMS86201 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-F5Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：1 week风险等级：0.95
Samacsys Confidence：4Samacsys Status：Released
Samacsys PartID：1067438Samacsys Pin Count：10
Samacsys Part Category：MOSFET (N-Channel)Samacsys Package Category：Other
Samacsys Footprint Name：PQFN8 5X6, 1.27P CASE 483AE ISSUE A_2019OCTSamacsys Released Date：2019-12-27 10:27:35
Is Samacsys：N雪崩能效等级（Eas）：264 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：120 V最大漏极电流 (Abs) (ID)：65 A
最大漏极电流 (ID)：11.6 A最大漏源导通电阻：0.0115 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：MO-240AA
JESD-30 代码：R-PDSO-F5JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：5工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：104 W最大脉冲漏极电流 (IDM)：160 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin (Sn)
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

FDMS86201 数据手册

 浏览型号FDMS86201的Datasheet PDF文件第2页浏览型号FDMS86201的Datasheet PDF文件第3页浏览型号FDMS86201的Datasheet PDF文件第4页浏览型号FDMS86201的Datasheet PDF文件第5页浏览型号FDMS86201的Datasheet PDF文件第6页浏览型号FDMS86201的Datasheet PDF文件第7页 
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与FDMS86201相关器件

型号 品牌 获取价格 描述 数据表
FDMS86202 ONSEMI

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 		N 沟道，屏蔽门极，PowerTrench® MOSFET，120V，64A，7.2mΩ
FDMS86202ET120 ONSEMI

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 		N 沟道，屏蔽门极，PowerTrench® MOSFET，120V，102A，7.2mΩ
FDMS8622 FAIRCHILD

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 		N-Channel Power Trench® MOSFET 100 V, 16.5 A
FDMS8622 ONSEMI

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 		N 沟道，Power Trench® MOSFET，100V，16.5A，56mΩ
FDMS86250 FAIRCHILD

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 		N-Channel PowerTrench® MOSFET 150 V, 20 A, 2
FDMS86250 ONSEMI

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 		N 沟道，Power Trench® MOSFET，150V，30A，25mΩ
FDMS86252 FAIRCHILD

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 		Max rDS(on) = 51 mΩ at VGS = 10 V, ID = 4.6
FDMS86252 ONSEMI

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 		N 沟道屏蔽门极 PowerTrench® MOSFET 150V，16A，51mΩ
FDMS86252L FAIRCHILD

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 		Power Field-Effect Transistor, 4.4A I(D), 150V, 0.056ohm, 1-Element, N-Channel, Silicon, M
FDMS86252L ONSEMI

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 		N 沟道，屏蔽门极，PowerTrench® MOSFET，150V，12A，56mΩ

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