Datasheet > FDMS86250

FDMS86250

更新时间： 2024-09-25 12:23:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	272K
描述
N-Channel PowerTrenchÂ® MOSFET 150 V, 20 A, 25 mÎ©

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FDMS86250 数据手册

December 2011

FDMS86250

N-Channel PowerTrench^®MOSFET

150 V, 20 A, 25 mΩ

Features

General Description

This N-Channel MOSFET is produced using Fairchild

Semiconductor’s advanced Power Trench process that has

been especially tailored to minimize the on-state resistance and

yet maintain superior switching performance.

Max r_DS(on)= 25 mΩ at V_GS= 10 V, I_D= 6.7 A

Max r_DS(on)= 33 mΩ at V_GS= 6 V, I_D= 5.8 A

Advanced package and silicon combination for low r_DS(on)and

high efficiency

MSL1 robust package design

100% UIL tested

Application

DC-DC Conversion

RoHS Compliant

Bottom

Top

Pin 1

Power 56

MOSFET Maximum Ratings T_A= 25 °C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

150

±20

Drain Current -Continuous (Package limited)

-Continuous (Silicon limited)

-Continuous

T_C= 25 °C

_C= 25 °C

6.7

I_D

T_A= 25 °C

(Note 1a)

(Note 3)

(Note 1a)

-Pulsed

E_AS

Single Pulse Avalanche Energy

Power Dissipation

180

T_C= 25 °C

T_A= 25 °C

P_D

Power Dissipation

2.5

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

1.3

°C/W

(Note 1a)

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

13 ’’

Tape Width

12 mm

Quantity

FDMS86250

Power 56

3000 units

FDMS86250 Rev. C

www.fairchildsemi.com

12 3 4 5 6 7

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与FDMS86250相关器件

型号	品牌	获取价格	描述	数据表
FDMS86252	FAIRCHILD	获取价格	Max rDS(on) = 51 mÎ© at VGS = 10 V, ID = 4.6
FDMS86252	ONSEMI	获取价格	N 沟道屏蔽门极 PowerTrench® MOSFET 150V，16A，51mΩ
FDMS86252L	FAIRCHILD	获取价格	Power Field-Effect Transistor, 4.4A I(D), 150V, 0.056ohm, 1-Element, N-Channel, Silicon, M
FDMS86252L	ONSEMI	获取价格	N 沟道，屏蔽门极，PowerTrench® MOSFET，150V，12A，56mΩ
FDMS86255	ONSEMI	获取价格	N 沟道屏蔽门极 PowerTrench® MOSFET 150 V，45A，12.4mΩ
FDMS86255ET150	ONSEMI	获取价格	N 沟道屏蔽门极 PowerTrench® MOSFET 150 V，63 A，12.4m
FDMS86263P	FAIRCHILD	获取价格	Power Field-Effect Transistor, 4.4A I(D), 150V, 0.053ohm, 1-Element, P-Channel, Silicon, M
FDMS86263P	ONSEMI	获取价格	P 沟道，PowerTrench® MOSFET，-150V，-22A，53mΩ
FDMS86300	FAIRCHILD	获取价格	N-Channel PowerTrenchÂ® MOSFET 80 V, 42 A, 3.
FDMS86300	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，80V，122A，3.9mΩ