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FDMS8320L PDF预览

FDMS8320L

更新时间: 2024-09-26 11:14:51
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲光电二极管晶体管
页数 文件大小 规格书
7页 451K
描述
N 沟道,PowerTrench® MOSFET,40V,248A,1.1mΩ

FDMS8320L 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-F5Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:0.96雪崩能效等级(Eas):264 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:40 V最大漏极电流 (Abs) (ID):100 A
最大漏极电流 (ID):36 A最大漏源导通电阻:0.0011 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:MO-240AA
JESD-30 代码:R-PDSO-F5JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:5工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):104 W最大脉冲漏极电流 (IDM):150 A
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin (Sn)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDMS8320L 数据手册

 浏览型号FDMS8320L的Datasheet PDF文件第2页浏览型号FDMS8320L的Datasheet PDF文件第3页浏览型号FDMS8320L的Datasheet PDF文件第4页浏览型号FDMS8320L的Datasheet PDF文件第5页浏览型号FDMS8320L的Datasheet PDF文件第6页浏览型号FDMS8320L的Datasheet PDF文件第7页 
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