Datasheet > FDMC7660_12

FDMC7660_12

更新时间： 2024-11-20 12:23:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	288K
描述
N-Channel PowerTrenchÂ® MOSFET 30 V, 20 A, 2.2 mÎ©

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FDMC7660_12 数据手册

June 2012

FDMC7660

N-Channel PowerTrench^®MOSFET

30 V, 20 A, 2.2 mΩ

Features

General Description

Max r_DS(on)= 2.2 mΩ at V_GS= 10 V, I_D= 20 A

Max r_DS(on)= 3.3 mΩ at V_GS= 4.5 V, I_D= 18 A

High performance technology for extremely low r_DS(on)

Termination is Lead-free and RoHS Compliant

This N-Channel MOSFET is produced using Fairchild

Semiconductor’s advanced PowerTrench^®process that has

been especially tailored to minimize the on-state resistance. This

device is well suited for Power Management and load switching

applications common in Notebook Computers and Portable

Battery Packs.

Applications

DC - DC Buck Converters

Point of Load

High Efficiency Load Switch and Low Side Switching

Bottom

Top

Pin 1

Power 33

MOSFET Maximum Ratings T_C= 25°C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

±20

(Note 4)

Drain Current -Continuous (Package limited)

-Continuous (Silicon limited)

-Continuous

T_C= 25°C

_C= 25°C

100

I_D

T_A= 25°C

(Note 1a)

(Note 3)

-Pulsed

200

E_AS

Single Pulse Avalanche Energy

Power Dissipation

200

T_C= 25°C

T_A= 25°C

P_D

Power Dissipation

(Note 1a)

2.3

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to + 150

°C

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

°C/W

(Note 1a)

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

13’’

Tape Width

12 mm

Quantity

FDMC7660

Power 33

3000 units

FDMC7660 Rev.C5

www.fairchildsemi.com

12 3 4 5 6 7

中文翻译

下载PDF

与FDMC7660_12相关器件

型号	品牌	获取价格	描述	数据表
FDMC7660DC	FAIRCHILD	获取价格	DUAL COOLâ¢ PACKAGE POWERTRENCHÂ® MOSFETs
FDMC7660DC	ONSEMI	获取价格	N 沟道，双 CoolTM 33 PowerTrench® MOSFET，30V，40A，
FDMC7660S	FAIRCHILD	获取价格	N-Channel Power Trench® SyncFET 30 V, 20 A, 2
FDMC7660S	ONSEMI	获取价格	N 沟道，Power Trench® SyncFET™，30V，20A，2.2mΩ
FDMC7664	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，30V，18.8A，4.2mΩ
FDMC7664	FAIRCHILD	获取价格	N-Channel PowerTrench® MOSFET 30 V, 18.8 A, 4
FDMC7672	FAIRCHILD	获取价格	N-Channel Power Trench® MOSFET 30 V, 16.9 A,
FDMC7672	ONSEMI	获取价格	30V N沟道PowerTrench® MOSFET
FDMC7672S	FAIRCHILD	获取价格	Power Field-Effect Transistor, 14.8A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, M
FDMC7672S	ONSEMI	获取价格	N 沟道，Power Trench® SyncFET™，30V，14.8A，6.0mΩ