Datasheet > FDMB3800N_12

FDMB3800N_12

更新时间： 2024-10-28 12:23:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	204K
描述
Dual N-Channel PowerTrenchÂ® MOSFET 30V, 4.8A, 40m

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FDMB3800N_12 数据手册

August 2012

FDMB3800N

Dual N-Channel PowerTrench^®MOSFETꢀ

30V, 4.8A, 40mꢁ

Features

General Description

Max r_DS(on)= 40mꢁ at V_GS= 10V, I_D= 4.8A

Max r_DS(on)= 51mꢁ at V_GS= 4.5V, I_D= 4.3A

Fast switching speed

These N-Channel Logic Level MOSFETs are produced using

Fairchild Semiconductor's advanced PowerTrench process that

has been especially tailored to minimize the on-state resistance

and yet maintain superior switching performance.

Low gate Charge

These devices are well suited for low voltage and battery

powered applications where low in-line power loss and fast

switching are required.

High performance trench technology for extremely low r_DS(on)

High power and current handling capability.

RoHS Compliant

MicroFET 3X1.9

MOSFET Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current

-Continuous

-Pulsed

T_A= 25°C

(Note 1a)

4.8

I_D

Power Dissipation

T_A= 25°C

Note 1a)

(Note 1b)

1.6

0.75

P_D

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_ꢂJA

Thermal Resistance, Junction to Ambient

(Note 1a)

(Note 1b)

°C/W

165

Package Marking and Ordering Information

Device Marking

Device

FDMB3800N

Package

MicroFET3X1.9

Reel Size

Tape Width

8mm

Quantity

3000 units

3800

7’’

FDMB3800N Rev. C2

www.fairchildsemi.com

12 3 4 5 6 7

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