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FDMC012N03 PDF预览

FDMC012N03

更新时间： 2024-10-29 11:14:15
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲光电二极管晶体管
页数 文件大小 规格书
8页 505K
描述
N 沟道，PowerTrench® MOSFET，30 V，1.23 mΩ

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中文翻译

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FDMC012N03 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, S-PDSO-N5Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：20 weeks风险等级：1.53
雪崩能效等级（Eas）：337.5 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (Abs) (ID)：185 A最大漏极电流 (ID)：185 A
最大漏源导通电阻：0.00123 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：132 pFJEDEC-95代码：MO-240BA
JESD-30 代码：S-PDSO-N5JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：5工作模式：ENHANCEMENT MODE
最高工作温度：150 °C最低工作温度：-55 °C
封装主体材料：PLASTIC/EPOXY封装形状：SQUARE
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：64 W
最大脉冲漏极电流 (IDM)：688 A表面贴装：YES
端子面层：Tin (Sn)端子形式：NO LEAD
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
最大关闭时间（toff）：79 ns最大开启时间（吨）：40 ns
Base Number Matches：1

FDMC012N03 数据手册

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中文翻译

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与FDMC012N03相关器件

型号 品牌 获取价格 描述 数据表
FDMC013P030Z ONSEMI

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 		P 沟道，PowerTrench® MOSFET，-30V，-54A，7.0mΩ
FDMC0310AS ONSEMI

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 		N 沟道，PowerTrench® SyncFET™，30V，21A，4.4mΩ
FDMC0310AS-F127 ONSEMI

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 		N 沟道，PowerTrench® SyncFET™，30V，21A，4.4mΩ
FDMC035N10X1 ONSEMI

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 		N 沟道，PowerTrench® MOSFET，100 V，5.5 A，37 mΩ
FDMC15N06 FAIRCHILD

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 		N-Channel MOSFET 55V, 15A, 0.090Ω
FDMC15N06 ONSEMI

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 		55 V、15 A、90 mΩ、N 沟道 UltraFET 功率 MOSFET
FDMC2512SDC FAIRCHILD

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 		N-Channel Dual CoolTM PowerTrench® SyncFETTM
FDMC2512SDC ONSEMI

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 		N 沟道，双 CoolTM 33 PowerTrench® SyncFETTM，25V，4
FDMC2514SDC ONSEMI

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 		N 沟道 Dual Cool™ 33 PowerTrench® SyncFET™ 25V，
FDMC2523P FAIRCHILD

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 		P-Channel QFET -150V, -3A, 1.5ohm

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