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FDMC013P030Z

更新时间： 2024-10-29 11:15:47
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲光电二极管晶体管
页数 文件大小 规格书
8页 431K
描述
P 沟道，PowerTrench® MOSFET，-30V，-54A，7.0mΩ

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中文翻译

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FDMC013P030Z 技术参数

是否无铅：不含铅生命周期：Active
包装说明：SMALL OUTLINE, S-PDSO-N5Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：23 weeks
风险等级：1.52Is Samacsys：N
雪崩能效等级（Eas）：54 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (Abs) (ID)：54 A最大漏极电流 (ID)：54 A
最大漏源导通电阻：0.007 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：1870 pFJESD-30 代码：S-PDSO-N5
JESD-609代码：e4湿度敏感等级：1
元件数量：1端子数量：5
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
最低工作温度：-55 °C封装主体材料：PLASTIC/EPOXY
封装形状：SQUARE封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：P-CHANNEL
最大功率耗散 (Abs)：30 W最大脉冲漏极电流 (IDM)：309 A
表面贴装：YES端子面层：Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
端子形式：NO LEAD端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICON最大关闭时间（toff）：238 ns
最大开启时间（吨）：306 nsBase Number Matches：1

FDMC013P030Z 数据手册

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中文翻译

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 		N 沟道，PowerTrench® MOSFET，100 V，5.5 A，37 mΩ
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 		N-Channel MOSFET 55V, 15A, 0.090Ω
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FDMC2512SDC FAIRCHILD

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 		N-Channel Dual CoolTM PowerTrench® SyncFETTM
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 		N 沟道，双 CoolTM 33 PowerTrench® SyncFETTM，25V，4
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 		P-Channel QFET -150V, -3A, 1.5ohm
FDMC2523P ONSEMI

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 		P 沟道，QFET® MOSFET，-150V，-3A，1.5Ω

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