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FDMB3900AN PDF预览

FDMB3900AN

更新时间： 2024-10-29 11:15:19
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管晶体管
页数 文件大小 规格书
9页 355K
描述
N 沟道，PowerTrench® MOSFET，25V，7.0A，23mΩ

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中文翻译

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FDMB3900AN 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：3 X 1.90 MM, ROHS COMPLIANT, MICROFET-6Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：23 weeks风险等级：1.02
其他特性：ULTRA-LOW RESISTANCE外壳连接：DRAIN
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压：25 V
最大漏极电流 (Abs) (ID)：7 A最大漏极电流 (ID)：7 A
最大漏源导通电阻：0.023 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：215 pFJESD-30 代码：R-PDSO-N6
JESD-609代码：e4湿度敏感等级：1
元件数量：2端子数量：6
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：1.6 W
子类别：FET General Purpose Power表面贴装：YES
端子面层：Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)端子形式：NO LEAD
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON

FDMB3900AN 数据手册

 浏览型号FDMB3900AN的Datasheet PDF文件第2页浏览型号FDMB3900AN的Datasheet PDF文件第3页浏览型号FDMB3900AN的Datasheet PDF文件第4页浏览型号FDMB3900AN的Datasheet PDF文件第5页浏览型号FDMB3900AN的Datasheet PDF文件第6页浏览型号FDMB3900AN的Datasheet PDF文件第7页 
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www.onsemi.com  
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers  
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor  
product management systems do not have the ability to manage part nomenclature that utilizes an underscore  
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain  
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated  
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please  
email any questions regarding the system integration to Fairchild_questions@onsemi.com.  
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number  
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FDMB668P FAIRCHILD

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 		P-Channel 1.8V Logic Level PowerTrench MOSFET -20V, -6.1A, 35mohm
FDMC007N08LC ONSEMI

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 		N 沟道，屏蔽门极，PowerTrench® MOSFET，80V，66A，7.0mΩ
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FDMC008N08C ONSEMI

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 		N 沟道，屏蔽门极，PowerTrench® MOSFET，80V，60A，7.8mΩ
FDMC010N08C ONSEMI

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 		N 沟道，屏蔽门极，PowerTrench® MOSFET，80 V，51 A，10 mΩ
FDMC010N08LC ONSEMI

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 		N 沟道，屏蔽门极，PowerTrench® MOSFET，80 V，51 A，10.9
FDMC012N03 ONSEMI

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 		N 沟道，PowerTrench® MOSFET，30 V，1.23 mΩ
FDMC013P030Z ONSEMI

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 		P 沟道，PowerTrench® MOSFET，-30V，-54A，7.0mΩ

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