Datasheet > FDMB2308PZ

FDMB2308PZ

更新时间： 2024-10-29 11:13:59

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	234K
描述
双共漏极 P 沟道 PowerTrench® MOSFET -20V，-7A，36mΩ

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中文翻译

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FDMB2308PZ 数据手册

DATA SHEET

www.onsemi.com

MOSFET – Dual, P-Channel,

Common Drain,

POWERTRENCH⁾

MAX

S1S2

S1S2(on)

S1S2

−20 V

36 mW @ −4.5 V

50 mW @ −2.5 V

−7 A

-20 V, -7 A, 36 mW

Pin 1

S1 S1 G1

D1/D2

Pin 1

FDMB2308PZ

General Description

This device is designed specifically as a single package solution for

Li−Ion battery pack protection circuit and other ultra−portable

applications. It features two common drain P−channel MOSFETs,

which enables bidirectional current flow, on onsemi’s advanced

POWERTRENCH process with state of the art MircoFETt

Leadframe, the FDMB2308PZ minimizes both PCB space and

S2 S2 G2

Bottom

Top

WDFN6 2x3, 0.65P

CASE 511CX

S1S2(on)

Features

• Max r

= 36 mW at V = −4.5 V, I = −5.7 A

GS D

S1S2(on)

• Max r

= 50 mW at V = −2.5 V, I = −4.6 A

GS D

MARKING DIAGRAM

S1S2(on)

• Low Profile − 0.8 mm Maximum − in the New Package MicroFET

2x3 mm

&Z&2&K

308

• HBM ESD Protection Level > 2.8 kV (Note 3)

• This Device is Pb−Free, Halide Free and is RoHS Compliant

Applications

&Z = Assembly Plant Code

&2 = 2−Digit Date Code

• Li−Ion Battery Pack

&K = 2−Digits Lot Run Traceability Code

308 = Specific Device Code

MOSFET MAXIMUM RATINGS (T = 25°C, unless otherwise noted)

Symbol

Parameter

Source1 to Source2 Voltage

Gate to Source Voltage

Ratings

−20

Unit

S1S2

PIN ASSIGNMENT

Source1 to Source2 Current

S1S2

−Continuous T = 25°C (Note 1a)

−7

−30

−Pulsed

Power Dissipation

T = 25°C (Note 1a)

2.2

0.8

T = 25°C (Note 1b)

T , T

Operating and Storage Junction

Temperature Range

−55 to +150

°C

STG

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS (T = 25°C, unless otherwise noted)

ORDERING INFORMATION

Symbol

Parameter

Ratings

Unit

See detailed ordering and shipping information on page 5 of

this data sheet.

Thermal Resistance, Junction to Ambient

(Note 1a)

°C/W

Thermal Resistance, Junction to Ambient

(Note 1b)

161

Publication Order Number:

March, 2023 − Rev. 3

FDMB2308PZ/D

12 3 4 5 6 7

中文翻译

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与FDMB2308PZ相关器件

型号	品牌	获取价格	描述	数据表
FDMB3800N	FAIRCHILD	获取价格	Dual N-Channel PowerTrench㈢ MOSFET 30V, 4.8A,
FDMB3800N	ONSEMI	获取价格	双 N 沟道，PowerTrench® MOSFET，30V，4.8A，40mΩ
FDMB3800N_0610	FAIRCHILD	获取价格	Dual N-Channel PowerTrench㈢ MOSFET 30V, 4.8A,
FDMB3800N_12	FAIRCHILD	获取价格	Dual N-Channel PowerTrenchÂ® MOSFET 30V, 4.8A
FDMB3900AN	FAIRCHILD	获取价格	nullDual N-Channel Power TrenchÂ® MOSFETTM 25
FDMB3900AN	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，25V，7.0A，23mΩ
FDMB506P	FAIRCHILD	获取价格	P-Channel 1.8V Logic Level PowerTrench MOSFET
FDMB668P	FAIRCHILD	获取价格	P-Channel 1.8V Logic Level PowerTrench MOSFET -20V, -6.1A, 35mohm
FDMC007N08LC	ONSEMI	获取价格	N 沟道，屏蔽门极，PowerTrench® MOSFET，80V，66A，7.0mΩ
FDMC007N08LCDC	ONSEMI	获取价格	N 沟道，屏蔽门极，PowerTrench® MOSFET，80V，64A，6.8mΩ

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