Datasheet > FDMA910PZ

FDMA910PZ

更新时间： 2024-10-29 11:15:39

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	201K
描述
P 沟道，PowerTrench® MOSFET，-20V，-9.4A，20mΩ

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中文翻译

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FDMA910PZ 数据手册

DATA SHEET

www.onsemi.com

MOSFET – Single, P-Channel,

POWERTRENCH⁾

MAX

I MAX

DS(on)

−20 V

20 mW @ −4.5 V

24 mW @ −2.5 V

34 mW @ −1.8 V

−9.4 A

-20 V, -9.4 A, 20 mW

FDMA910PZ

Pin 1

Drain

General Description

Source

This device is designed specifically for battery charge or load

switching in cellular handset and other ultraportable applications. It

features a MOSFET with low on−state resistance and zener diode

protection against ESD. The MicroFETt 2x2 package offers

exceptional thermal performance for its physical size and is well

suited to linear mode applications.

Features

Bottom

• Max r

= 20 mW at V = −4.5 V, I = −9.4 A

GS D

DS(on)

WDFN6 2x2, 0.65P

(MicroFET 2x2)

CASE 511CZ

= 24 mW at V = −2.5 V, I = −8.6 A

= 34 mW at V = −1.8 V, I = −7.2 A

• Low Profile − 0.8 mm Maximum in the New Package MicroFET

2x2 mm

MARKING DIAGRAM

• HBM ESD Protection Level > 2.8 kV Typical (Note 3)

• Free from Halogenated Compounds and Antimony Oxides

• This Device is Pb−Free, Halide Free and is RoHS Compliant

&Z&2&K

910

MOSFET MAXIMUM RATINGS (T = 25°C, unless otherwise noted)

&Z = Assembly Plant Code

&2 = 2−Digit Date Code

&K = 2−Digits Lot Run Traceability Code

910 = Specific Device Code

Symbol

Parameter

Drain to Source Voltage

Gate to Source Voltage

Ratings

Unit

−20

− Continuous T = 25°C (Note 1a)

−9.4

−45

− Pulsed

PIN ASSIGNMENT

Power Dissipation

T = 25°C (Note 1a)

2.4

0.9

Bottom Drain Contact

T = 25°C (Note 1b)

T , T

Operating and Storage Junction

Temperature Range

−55 to +150

°C

STG

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS (T = 25°C, unless otherwise noted)

Symbol

Parameter

Ratings

Unit

Thermal Resistance, Junction to Ambient

(Note 1a)

°C/W

ORDERING INFORMATION

See detailed ordering and shipping information on page 5 of

this data sheet.

Thermal Resistance, Junction to Ambient

(Note 1b)

145

Publication Order Number:

March, 2023 − Rev. 3

FDMA910PZ/D

12 3 4 5 6 7

中文翻译

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与FDMA910PZ相关器件

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FDMB2307NZ	FAIRCHILD	获取价格	New Products, Tips and Tools for Power and Mobile Applications
FDMB2307NZ	ONSEMI	获取价格	双共漏极，N 沟道，PowerTrench® MOSFET，20V，9.7A，16.5mΩ
FDMB2308PZ	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 2-Element, P-Channel, Silicon, Metal-oxide Semicondu
FDMB2308PZ	ONSEMI	获取价格	双共漏极 P 沟道 PowerTrench® MOSFET -20V，-7A，36mΩ
FDMB3800N	FAIRCHILD	获取价格	Dual N-Channel PowerTrench㈢ MOSFET 30V, 4.8A,
FDMB3800N	ONSEMI	获取价格	双 N 沟道，PowerTrench® MOSFET，30V，4.8A，40mΩ
FDMB3800N_0610	FAIRCHILD	获取价格	Dual N-Channel PowerTrench㈢ MOSFET 30V, 4.8A,
FDMB3800N_12	FAIRCHILD	获取价格	Dual N-Channel PowerTrenchÂ® MOSFET 30V, 4.8A
FDMB3900AN	FAIRCHILD	获取价格	nullDual N-Channel Power TrenchÂ® MOSFETTM 25
FDMB3900AN	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，25V，7.0A，23mΩ

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