Datasheet > FDMA8884

FDMA8884

更新时间： 2024-10-29 11:12:51

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页数	文件大小	规格书
6页	383K
描述
30V单N沟道PowerTrench® MOSFET

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中文翻译

获取价格

数据手册

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FDMA8884 数据手册

May 2014

FDMA8884

Single N-Channel Power Trench^®MOSFET

30 V, 6.5 A, 23 mΩ

Features

General Description

Max r_DS(on)= 23 mΩ at V_GS= 10 V, I_D= 6.5 A

Max r_DS(on)= 30 mΩ at V_GS= 4.5 V, I_D= 6.0 A

High performance trench technology for extremely low r_DS(on)

Fast switching speed

This N-Channel MOSFET is produced using Fairchild

Semiconductor‘s advanced Power Trench^®process that has

been optimized for r_DS(on)switching performance.

Application

RoHS Compliant

Primary Switch

Pin 1

Bottom Drain Contact

Drain

Source

MicroFET 2X2 (Bottom View)

MOSFET Maximum Ratings T_A= 25 °C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

±20

(Note 3)

Drain Current -Continuous (Package limited) T_C= 25 °C

8.0

I_D

-Continuous

-Pulsed

T_A= 25 °C

(Note 1a)

6.5

Power Dissipation

Operating and Storage Junction Temperature Range

(Note 1a)

(Note 1b)

1.9

P_D

0.7

T_J, T_STG

-55 to +150

°C

Thermal Characteristics

R_θJA

Thermal Resistance, Junction to Ambient

(Note 1a)

(Note 1b)

°C/W

180

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

7 ’’

Tape Width

8 mm

Quantity

884

FDMA8884

MicroFET 2x2

3000 units

FDMA8884 Rev.C5

www.fairchildsemi.com

12 3 4 5 6

中文翻译

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