5秒后页面跳转
FDMA008P20LZ PDF预览

FDMA008P20LZ

更新时间: 2024-02-03 04:12:14
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 411K
描述
单 P 沟道 PowerTrench® MOSFET -20V,-2.5A,13mΩ

FDMA008P20LZ 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:,Reach Compliance Code:not_compliant
Factory Lead Time:20 weeks风险等级:1.55
JESD-609代码:e3湿度敏感等级:1
峰值回流温度(摄氏度):NOT SPECIFIED端子面层:Tin (Sn)
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

FDMA008P20LZ 数据手册

 浏览型号FDMA008P20LZ的Datasheet PDF文件第1页浏览型号FDMA008P20LZ的Datasheet PDF文件第2页浏览型号FDMA008P20LZ的Datasheet PDF文件第3页浏览型号FDMA008P20LZ的Datasheet PDF文件第4页浏览型号FDMA008P20LZ的Datasheet PDF文件第6页浏览型号FDMA008P20LZ的Datasheet PDF文件第7页 
FDMA008P20LZ  
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)  
J
2
1
DUTY CYCLE−DESCENDING ORDER  
D = 0.5  
0.2  
0.1  
0.01  
0.1  
P
DM  
0.05  
0.02  
0.01  
t
1
t
2
0.001  
NOTES:  
(t) = r(t) x R  
Z
qJA  
qJA  
o
SINGLE PULSE  
0.0001  
R
= 145 C/W  
qJA  
Peak T = P  
x Z (t) + T  
J
DM  
qJA A  
Duty Cycle, D = t / t  
1
2
0.00001  
10−6  
10−5  
10−4  
10−3  
t, RECTANGULAR PULSE DURATION (s)  
10−2  
10−1  
11  
0
100  
1000  
Figure 12. Junction−to−Ambient Transient Thermal Response Curve  
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other  
countries.  
www.onsemi.com  
5

与FDMA008P20LZ相关器件

型号 品牌 描述 获取价格 数据表
FDMA0104 FAIRCHILD 20V Single N-Channel 1.5 V Specified PowerTrench® MOSFET, 6LD,MLP,DUAL,NON-JEDEC,2

获取价格

FDMA037N08LC ONSEMI N 沟道,PowerTrench® MOSFET,80 V,4 A,36.5 mΩ

获取价格

FDMA1023PZ FAIRCHILD Dual P-Channel PowerTrench MOSFET -20V, -3.7A, 72mohm

获取价格

FDMA1023PZ ONSEMI 双 P 沟道,Power Trench® MOSFET,-20V,-3.7A,72mΩ

获取价格

FDMA1023PZ_08 FAIRCHILD Dual P-Channel PowerTrench㈢ MOSFET

获取价格

FDMA1023PZ-F106 ONSEMI 双 P 沟道,Power Trench® MOSFET,-20V,-3.7A,72mΩ

获取价格