Datasheet > FDMA1023PZ_08

FDMA1023PZ_08

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	469K
描述
Dual P-Channel PowerTrench㈢ MOSFET

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FDMA1023PZ_08 数据手册

March 2008

FDMA1023PZ

Dual P-Channel PowerTrench^®MOSFET

–20V, –3.7A, 72mΩ

Features

General Description

Max r_DS(on)= 72mΩ at V_GS= –4.5V, I_D= –3.7A

Max r_DS(on)= 95mΩ at V_GS= –2.5V, I_D= –3.2A

Max r_DS(on)= 130mΩ at V_GS= –1.8V, I_D= –2.0A

Max r_DS(on)= 195mΩ at V_GS= –1.5V, I_D= –1.0A

This device is designed specifically as a single package

solution for the battery charge switch in cellular handset

and other ultra-portable applications. It features two independent

P-Channel MOSFETs with low on-state resistance for minimum

conduction losses. When connected in the typical common

source configuration, bi-directional current flow is possible.

Low profile - 0.8 mm maximum - in the new package

MicroFET 2x2 mm

The MicroFET 2X2 package offers exceptional thermal

performance for its physical size and is well suited to linear mode

applications.

HBM ESD protection level > 2kV typical (Note 3)

RoHS Compliant

Pin 1

MicroFET 2X2

MOSFET Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

–20

±8

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous

-Pulsed

(Note 1a)

–3.7

–6

I_D

1.5

Power Dissipation

(Note 1a)

(Note 1b)

P_D

0.7

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

R_θJA

Thermal Resistance for Single Operation, Junction to Ambient

(Note 1a)

(Note 1b)

(Note 1c)

(Note 1d)

173

Thermal Resistance for Single Operation, Junction to Ambient

Thermal Resistance for Dual Operation, Junction to Ambient

°C/W

151

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape Width

8mm

Quantity

023

FDMA1023PZ

MicroFET 2X2

7”

3000 units

FDMA1023PZ Rev.C2

www.fairchildsemi.com

12 3 4 5 6 7

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