Datasheet > FDMA2002NZ

FDMA2002NZ

更新时间： 2024-02-03 20:48:03

品牌	Logo	应用领域
安森美 - ONSEMI		开关光电二极管晶体管
页数	文件大小	规格书
6页	190K
描述
双 N 沟道 PowerTrench® MOSFET 30V，2.9A，123mΩ

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FDMA2002NZ 数据手册

DATA SHEET

www.onsemi.com

MOSFET – Dual, N-Channel,

POWERTRENCH⁾

MAX

I MAX

DS(on)

30 V

123 mꢀ @ 4.5 V

140 mꢀ @ 3.0 V

163 mꢀ @ 2.5 V

2.9 A

30 V, 2.9 A, 123 mW

FDMA2002NZ

Pin 1

General Description

This device is designed specifically as a single package solution

for dual switching requirements in cellular handset and other

ultra−portable applications. It features two independent N−Channel

MOSFETs with low on−state resistance for minimum conduction

losses. The MicroFETt 2x2 offers exceptional thermal performance

for its physical size and is well suited to linear mode applications.

WDFN6 2x2, 0.65P

(MicroFET 2x2)

CASE 511DA

MARKING DIAGRAM

Features

• 2.9 A, 30 V

DS(on)

= 123 mꢀ at V = 4.5 V

&Z&2&K

002

= 140 mꢀ at V = 3.0 V

= 163 mꢀ at V = 2.5 V

• Low Profile − 0.8 mm Maximum − In the New Package MicroFET

2x2 mm

&Z = Assembly Plant Code

• HBM ESD Protection Level > 1.8 kV (Note 3)

• Free from Halogenated Compounds and Antimony Oxides

• This Device is Pb−Free, Halide Free and is RoHS Compliant

&2 = 2−Digit Date Code

&K = 2−Digits Lot Run Traceability Code

002 = Device Code

PIN CONNECTIONS

ORDERING INFORMATION

†

Shipping

Device

Package

FDMA2002NZ

WDFN6

(Pb−Free,

Halide Free)

3000 /

Tape & Reel

For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Publication Order Number:

April, 2023 − Rev. 2

FDMA2002NZ/D

12 3 4 5 6

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