Datasheet > FDMA2002NZ

FDMA2002NZ

更新时间： 2024-01-28 07:59:19

品牌	Logo	应用领域
安森美 - ONSEMI		开关光电二极管晶体管
页数	文件大小	规格书
6页	190K
描述
双 N 沟道 PowerTrench® MOSFET 30V，2.9A，123mΩ

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FDMA2002NZ 数据手册

FDMA2002NZ

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

SWITCHING CHARACTERISTICS (Note 2)

Turn−On Delay Time

Turn−On Rise Time

Turn−Off Delay Time

Turn−Off Fall Time

Total Gate Charge

Gate−Source Charge

Gate−Drain Charge

= 15 V, I = 1 A

−

3.0

−

d(on)

= 4.5 V, R

= 6 ꢀ

GEN

d(off)

= 15 V, I = 2.9 A,

2.4

0.35

0.75

= 4.5 V

−

DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Maximum Continuous Source−Drain Diode Forward Current

−

0.9

0.8

2.9

1.2

−

Source−Drain Diode Forward Voltage

I = 2.0 A

I = 1.1 A

Diode Reverse Recovery Time

Diode Reverse Recovery Charge

I = 2.9 A, dI /dt = 100 A/ꢂ s

−

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. R

is determined with the device mounted on a 1 in oz. copper pad on a 1.5 x 1.5 in. board of FR−4 material. R

is guaranteed by design

ꢁ

while R

is determined by the user’s board design.

ꢁ

a. R

= 83°C/W when mounted on a 1 in pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB. For single operation.

ꢁ

b. R

c. R

d. R

= 193°C/W when mounted on a minimum pad of 2 oz copper.. For single operation.

ꢁ

= 68°C/W when mounted on a 1 in pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB. For dual operation.

= 145°C/W when mounted on a minimum pad of 2 oz copper. For dual operation.

a. 83°C/W when

b. 193°C/W when

mounted on

c. 68°C/W when

d. 145°C/W when

mounted on

mounted on a 1

mounted on a

in pad of 2 oz

minimumpad of 2

oz copper.

1 in pad of 2

minimum pad of 2

oz copper.

copper.

oz copper.

2. Pulse Test: Pulse Width < 300 ꢂ s, Duty Cycle < 2.0%

3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

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