5秒后页面跳转
FDMA3027PZ PDF预览

FDMA3027PZ

更新时间: 2024-11-09 12:23:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
8页 302K
描述
Dual P-Channel PowerTrench® MOSFET -30 V, -3.3 A, 87 mΩ

FDMA3027PZ 数据手册

 浏览型号FDMA3027PZ的Datasheet PDF文件第2页浏览型号FDMA3027PZ的Datasheet PDF文件第3页浏览型号FDMA3027PZ的Datasheet PDF文件第4页浏览型号FDMA3027PZ的Datasheet PDF文件第5页浏览型号FDMA3027PZ的Datasheet PDF文件第6页浏览型号FDMA3027PZ的Datasheet PDF文件第7页 
June 2012  
FDMA3027PZ  
Dual P-Channel PowerTrench® MOSFET  
-30 V, -3.3 A, 87 mΩ  
Features  
General Description  
This device is designed specifically as a single package solution  
for dual switching requirements such as gate driver for larger  
Mosfets. It features two independent P-Channel MOSFETs with  
low on-state resistance for minimum conduction losses. The  
MicroFET 2x2 package offers exceptional thermal performance  
for its physical size and is well suited to linear mode applications.  
G-S zener has been added to enhance ESD voltage level.  
„ Max rDS(on) = 87 mΩ at VGS = -10 V, ID = -3.3 A  
„ Max rDS(on) = 152 mΩ at VGS = -4.5 V, ID = -2.3 A  
„ HBM ESD protection level > 2 KV typical (Note 3)  
„ Low profile - 0.8 mm maximum - in the new package  
MicroFET 2x2 mm  
„ RoHS Compliant  
Applications  
„ Load Switch  
„ Discrete Gate Driver  
PIN 1  
S1 G1 D2  
S1  
G1  
D2  
1
6
D1  
G2  
S2  
D1  
D2  
2
3
5
4
D1 G2 S2  
Bottom  
Top  
MicroFET 2x2  
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted  
Symbol  
VDS  
VGS  
Parameter  
Ratings  
-30  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current -Continuous  
-Pulsed  
V
V
±25  
-3.3  
-15  
(Note 1a)  
ID  
A
Power Dissipation  
Power Dissipation  
(Note 1a)  
(Note 1b)  
1.4  
PD  
W
0.7  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance for Single Operation, Junction to Ambient  
(Note 1a)  
(Note 1b)  
(Note 1c)  
(Note 1d)  
(Note 1e)  
(Note 1f)  
86  
173  
69  
Thermal Resistance for Single Operation, Junction to Ambient  
Thermal Resistance for Dual Operation, Junction to Ambient  
Thermal Resistance for Dual Operation, Junction to Ambient  
Thermal Resistance for Single Operation, Junction to Ambient  
Thermal Resistance for Dual Operation, Junction to Ambient  
RθJA  
°C/W  
151  
160  
133  
Package Marking and Ordering Information  
Device Marking  
Device  
Package  
Reel Size  
7 ’’  
Tape Width  
8 mm  
Quantity  
327  
FDMA3027PZ  
MicroFET 2X2  
3000 units  
©2012 Fairchild Semiconductor Corporation  
FDMA3027PZ Rev.C  
1
www.fairchildsemi.com  

与FDMA3027PZ相关器件

型号 品牌 获取价格 描述 数据表
FDMA3027PZ-F130 ONSEMI

获取价格

双 P 沟道,Power Trench® MOSFET,-30V,-3.3A,87mΩ
FDMA3028N FAIRCHILD

获取价格

Dual N-Channel PowerTrench® MOSFET 30 V, 3.8
FDMA3028N ONSEMI

获取价格

双 N 沟道,PowerTrench® MOSFET,30V,3.8A,68mΩ
FDMA410NZ FAIRCHILD

获取价格

Single N-Channel 1.5 V Specified PowerTrench㈢
FDMA410NZ ONSEMI

获取价格

N 沟道,PowerTrench® MOSFET,1.5 V 指定,20V,9.5A,23
FDMA410NZT ONSEMI

获取价格

超薄 N 沟道,1.5 V,PowerTrench® MOSFET,20V,9.5A,23
FDMA410NZT-F130 ONSEMI

获取价格

超薄 N 沟道,1.5 V,PowerTrench® MOSFET,20V,9.5A,23
FDMA420NZ FAIRCHILD

获取价格

Single N-Channel 2.5V Specified PowerTrench M
FDMA420NZ ONSEMI

获取价格

N 沟道,PowerTrench® MOSFET,2.5V 指定,20V,5.7A,30m
FDMA420NZ_0609 FAIRCHILD

获取价格

Single N-Channel 2.5V Specified PowerTrench M