June 2012
FDMA3027PZ
Dual P-Channel PowerTrench® MOSFET
-30 V, -3.3 A, 87 mΩ
Features
General Description
This device is designed specifically as a single package solution
for dual switching requirements such as gate driver for larger
Mosfets. It features two independent P-Channel MOSFETs with
low on-state resistance for minimum conduction losses. The
MicroFET 2x2 package offers exceptional thermal performance
for its physical size and is well suited to linear mode applications.
G-S zener has been added to enhance ESD voltage level.
Max rDS(on) = 87 mΩ at VGS = -10 V, ID = -3.3 A
Max rDS(on) = 152 mΩ at VGS = -4.5 V, ID = -2.3 A
HBM ESD protection level > 2 KV typical (Note 3)
Low profile - 0.8 mm maximum - in the new package
MicroFET 2x2 mm
RoHS Compliant
Applications
Load Switch
Discrete Gate Driver
PIN 1
S1 G1 D2
S1
G1
D2
1
6
D1
G2
S2
D1
D2
2
3
5
4
D1 G2 S2
Bottom
Top
MicroFET 2x2
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
-30
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
V
V
±25
-3.3
-15
(Note 1a)
ID
A
Power Dissipation
Power Dissipation
(Note 1a)
(Note 1b)
1.4
PD
W
0.7
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
Thermal Resistance for Single Operation, Junction to Ambient
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
(Note 1e)
(Note 1f)
86
173
69
Thermal Resistance for Single Operation, Junction to Ambient
Thermal Resistance for Dual Operation, Junction to Ambient
Thermal Resistance for Dual Operation, Junction to Ambient
Thermal Resistance for Single Operation, Junction to Ambient
Thermal Resistance for Dual Operation, Junction to Ambient
RθJA
°C/W
151
160
133
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
7 ’’
Tape Width
8 mm
Quantity
327
FDMA3027PZ
MicroFET 2X2
3000 units
©2012 Fairchild Semiconductor Corporation
FDMA3027PZ Rev.C
1
www.fairchildsemi.com