Datasheet > FDMA410NZT-F130

FDMA410NZT-F130

更新时间： 2023-09-03 20:31:56

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	419K
描述
超薄 N 沟道，1.5 V，PowerTrench® MOSFET，20V，9.5A，23mΩ

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FDMA410NZT-F130 数据手册

DATA SHEET

www.onsemi.com

MOSFET – N-Channel,

POWERTRENCH⁾,

Ultra Thin, 1.5 V

MAX

D MAX

DS(on)

20 V

9.5 A

23 mW @ 4.5 V

Ultra Thin N−Channel

20 V, 9.5 A, 23 mW

Bottom Drain Contact

FDMA410NZT

Description

This Single N−Channel MOSFET has been designed using

onsemi’s advanced Power Trench process to optimize the R

DS(on)

= 1.5 V on special MicroFETt leadframe.

This design is similar to the FDMA410NZ, however it features our

new advanced 0.55 mm max 2 x 2 MLP package technology.

Features

• 0.55 mm max package height MicroFET 2 x 2 mm Package

• Max R

= 23 mW at V = 4.5 V, I = 9.5 A

GS D

DS(on)

= 29 mW at V = 2.5 V, I = 8.0 A

= 36 mW at V = 1.8 V, I = 4.0 A

= 60 mW at V = 1.5 V, I = 2.0 A

• HBM ESD protection level > 1.5 kV (Note 3)

UDFN6 2.05x2,05 0.65P

(MicroFET)

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

CASE 517DT

Compliant

Typical Applications

• Li−lon Battery Pack

• Baseband Switch

• Load Switch

• DC−DC Conversion

• Mobile Device Switching

MARKING DIAGRAM

&Z&2&K

410T

= Assembly Plant Code

= Numeric Date Code

= Lot Code

410T

= Specific Device Code

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

Publication Order Number:

April, 2023 − Rev. 3

FDMA410NZT/D

12 3 4 5 6 7 8

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