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FDMA7630 PDF预览

FDMA7630

更新时间: 2024-02-25 05:00:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
6页 219K
描述
Single N-Channel PowerTrench® MOSFET 30 V, 11 A, 13 mΩ

FDMA7630 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:2 X 2 MM, 0.80 MM HEIGHT, HALOGEN AND ANTIMONY FREE, ROHS COMPLIANT, MO-229, MICROFET-6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:16 weeks风险等级:1.1
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):11 A
最大漏极电流 (ID):11 A最大漏源导通电阻:0.013 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):55 pF
JESD-30 代码:S-PDSO-N6JESD-609代码:e4
湿度敏感等级:1元件数量:1
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:SQUARE封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):2.4 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:NO LEAD
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON

FDMA7630 数据手册

 浏览型号FDMA7630的Datasheet PDF文件第2页浏览型号FDMA7630的Datasheet PDF文件第3页浏览型号FDMA7630的Datasheet PDF文件第4页浏览型号FDMA7630的Datasheet PDF文件第5页浏览型号FDMA7630的Datasheet PDF文件第6页 
July 2012  
FDMA7630  
Single N-Channel PowerTrench® MOSFET  
30 V, 11 A, 13 mΩ  
Features  
General Description  
„ Max rDS(on) = 13 mΩ at VGS = 10 V, ID = 11 A  
This device has been designed to provide maximum efficiency  
and thermal performance for synchronous buck converters. The  
low rDS(on) and gate charge provide excellent switching  
performance.  
„ Max rDS(on) = 20 mΩ at VGS = 4.5 V, ID = 9 A  
„ Low Profile - 0.8 mm maximum - in the new package  
MicroFET 2x2 mm  
„ Free from halogenated compounds and antimony oxides  
„ RoHS compliant  
Application  
„ DC – DC Buck Converters  
Pin 1  
G
D
D
Bottom Drain Contact  
D
D
S
D
D
Drain  
Source  
G
D
D
S
MicroFET 2X2 (Bottom View)  
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted  
Symbol  
VDSS  
VGSS  
Parameter  
Ratings  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current -Continuous  
-Pulsed  
30  
V
V
±20  
TA = 25 °C  
(Note 1a)  
11  
24  
ID  
A
Power Dissipation  
Power Dissipation  
TA = 25 °C  
TA = 25 °C  
(Note 1a)  
(Note 1b)  
2.4  
PD  
W
0.9  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +150  
°C  
Thermal Characteristics  
RθJA  
RθJA  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Ambient  
(Note 1a)  
(Note 1b)  
52  
°C/W  
145  
Package Marking and Ordering Information  
Device Marking  
Device  
Package  
Reel Size  
7 ’’  
Tape Width  
12 mm  
Quantity  
630  
FDMA7630  
MicroFET 2x2  
3000 units  
1
©2012 Fairchild Semiconductor Corporation  
FDMA7630 Rev.C3  
www.fairchildsemi.com  

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