Datasheet > FDMA8878

FDMA8878

更新时间： 2024-10-29 11:15:23

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	245K
描述
单 N 沟道，Power Trench® MOSFET，30V，9.0A，16mΩ

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FDMA8878 数据手册

DATA SHEET

www.onsemi.com

MOSFET – N-Channel,

POWERTRENCH⁾

30 V, 9.0 A, 16 mW

WDFN6

CASE 511CZ

FDMA8878,

FDMA8878-F130

Bottom Drain Contact

General Description

This N−Channel MOSFET is produced using onsemi’s advanced

POWERTRENCH process that has been optimized for R

DS(on)

switching performance.

Features

MARKING DIAGRAM

• Max R

= 16 mW @ V = 10 V, I = 9.0 A

GS D

DS(on)

= 19 mW @ V = 4.5 V, I = 8.5 A

DS(on)

• High Performance Trench Technology for Extremely Low R

• Fast Switching Speed

DS(on)

ZXYKK

878

• Pb−Free, Halide Free and RoHS Compliant

Applications

• DC−DC Buck Converters

• Load Switch in NB

• Notebook Battery Power Management

= Assembly Plant Code

= 2−Digit Date Code

= Lot Run Code

878

= Specific Device Code

ABSOLUTE MAXIMUM RATINGS

PIN ASSIGNMENT

T = 25°C unless otherwise noted.

Symbol

Parameter

Ratings

Unit

Drain to Source Voltage

Gate to Source Voltage (Note 3)

Drain Current

Continuous (Package Limited),

= 25°C

Continuous, T = 25°C (Note 1a)

9.0

Pulsed

Power Dissipation, T = 25°C

(Note 1a)

(Note 1b)

2.4

0.9

ORDERING INFORMATION

See detailed ordering and shipping information on page 5

of this data sheet.

T , T

Operating and Storage Junction

Temperature Range

−55 to +150

°C

STG

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Symbol

Parameter

Ratings

Unit

Thermal Resistance,

°C/W

Junction to Ambient

(Note 1a)

145

(Note 1b)

Publication Order Number:

February, 2022 − Rev. 4

FDMA8878/D

12 3 4 5 6 7

中文翻译

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