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FDMA7670 PDF预览

FDMA7670

更新时间： 2024-10-29 11:14:27
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管晶体管
页数 文件大小 规格书
7页 368K
描述
30V单N沟道PowerTrench® MOSFET

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中文翻译

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FDMA7670 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：2 X 2 MM, 0.80 MM HEIGHT, HALOGEN AND ANTIMONY FREE, ROHS COMPLIANT, MICROFET-6Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：16 weeks风险等级：1.07
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：30 V最大漏极电流 (Abs) (ID)：11 A
最大漏极电流 (ID)：11 A最大漏源导通电阻：0.015 Ω
FET 技术：METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss)：55 pF
JESD-30 代码：S-PDSO-N6JESD-609代码：e4
湿度敏感等级：1元件数量：1
端子数量：6工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：SQUARE封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：2.4 W认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)端子形式：NO LEAD
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON

FDMA7670 数据手册

 浏览型号FDMA7670的Datasheet PDF文件第2页浏览型号FDMA7670的Datasheet PDF文件第3页浏览型号FDMA7670的Datasheet PDF文件第4页浏览型号FDMA7670的Datasheet PDF文件第5页浏览型号FDMA7670的Datasheet PDF文件第6页浏览型号FDMA7670的Datasheet PDF文件第7页 
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与FDMA7670相关器件

型号 品牌 获取价格 描述 数据表
FDMA7672 FAIRCHILD

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 		Single N-Channel PowerTrench® MOSFET 30 V, 9
FDMA7672 ONSEMI

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 		N 沟道，PowerTrench® MOSFET，30V，9A，21mΩ
FDMA8051L FAIRCHILD

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 		Small Signal Field-Effect Transistor, 10A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-
FDMA8051L ONSEMI

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 		单 N 沟道 PowerTrench® MOSFET 40V，10A，14mΩ
FDMA86108LZ ONSEMI

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 		N 沟道，PowerTrench® MOSFET，100V，2.2A，243mΩ
FDMA86151L ONSEMI

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 		N 沟道，PowerTrench® MOSFET，100V，3.3A，88mΩ
FDMA86251 ONSEMI

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 		单 N 沟道，PowerTrench® MOSFET，150V，2.4A，175mΩ
FDMA86265P ONSEMI

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 		P 沟道，PowerTrench® MOSFET，-150V，-1A，1.2Ω
FDMA86551L FAIRCHILD

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 		Small Signal Field-Effect Transistor, 7.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal
FDMA86551L ONSEMI

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 		N 沟道，PowerTrench® MOSFET，60V，7.5A，23mΩ

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