Datasheet > FDMA8878

FDMA8878

更新时间： 2024-10-28 11:59:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
6页	258K
描述
Single N-Channel Power TrenchÂ® MOSFET 30 V, 9.0 A, 16 mÎ©

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数据手册

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FDMA8878 数据手册

May 2012

FDMA8878

Single N-Channel Power Trench^®MOSFET

30 V, 9.0 A, 16 mΩ

Features

General Description

Max r_DS(on)= 16 mΩ at V_GS= 10 V, I_D= 9.0 A

Max r_DS(on)= 19 mΩ at V_GS= 4.5 V, I_D= 8.5 A

High performance trench technology for extremely low r_DS(on)

Fast switching speed

This N-Channel MOSFET is produced using Fairchild

Semiconductor‘s advanced Power Trench^®process that has

been optimized for r_DS(on), switching performance.

Application

RoHS Compliant

DC/DC Buck Converters

Load Switch in NB

Notebook Battery Power Management

Pin 1

Bottom Drain Contact

Drain

Source

MicroFET 2X2 (Bottom View)

MOSFET Maximum Ratings T_A= 25 °C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

±20

(Note 3)

Drain Current -Continuous (Package Limited) T_C= 25 °C

I_D

-Continuous

-Pulsed

T_A= 25 °C

(Note 1a)

9.0

Power Dissipation

T_A= 25 °C

(Note 1a)

(Note 1b)

2.4

P_D

0.9

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_θJA

Thermal Resistance, Junction to Ambient

(Note 1a)

(Note 1b)

°C/W

145

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape Width

12 mm

Quantity

878

FDMA8878

MicroFET 2x2

7 ’’

3000 units

FDMA8878 Rev.C

www.fairchildsemi.com

12 3 4 5 6

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