Datasheet > FDMA530PZ_08

FDMA530PZ_08

更新时间： 2024-10-28 03:36:27

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
6页	877K
描述
Single P-Channel PowerTrench㈢ MOSFET

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FDMA530PZ_08 数据手册

April 2008

FDMA530PZ

Single P-Channel PowerTrench^®MOSFET

–30V, –6.8A, 35mΩ

Features

General Description

Max r_DS(on)= 35mΩ at V_GS= –10V, I_D= –6.8A

This device is designed specifically for battery charge or load

switching in cellular handset and other ultraportable

applications . It features a MOSFET with low on-state resistance.

Max r_DS(on)= 65mΩ at V_GS= –4.5V, I_D= –5.0A

Low profile - 0.8mm maximum - in the new package MicroFET

2X2 mm

The MicroFET 2X2 package offers exceptional thermal

performance for its physical size and is well suited to linear mode

applications.

HBM ESD protection level > 3kV typical (Note 3)

RoHS Compliant

Pin 1

Bottom Drain Contact

Drain

Source

MicroFET 2X2 (Bottom View)

MOSFET Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

–30

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous

-Pulsed

±25

(Note 1a)

–6.8

I_D

–24

Power Dissipation

(Note 1a)

(Note 1b)

2.4

P_D

Power Dissipation

0.9

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

R_θJA

Thermal Resistance, Junction to Ambient

(Note 1a)

(Note 1b)

°C/W

145

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape Width

8mm

Quantity

530

FDMA530PZ

MicroFET 2X2

7’’

3000 units

FDMA530PZ Rev.B1

www.fairchildsemi.com

12 3 4 5 6

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