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FDMA7628 PDF预览

FDMA7628

更新时间: 2024-02-23 02:16:48
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
7页 248K
描述
Single N-Channel 1.5 V Specified PowerTrench® MOSFET 20 V, 9.4 A, 14.5 mΩ

FDMA7628 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:MLP
包装说明:SMALL OUTLINE, S-PDSO-N6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.73
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):9.4 A
最大漏极电流 (ID):9.4 A最大漏源导通电阻:0.0145 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):185 pF
JESD-30 代码:S-PDSO-N6JESD-609代码:e4
湿度敏感等级:1元件数量:1
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:SQUARE封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):1.9 W子类别:FET General Purpose Power
表面贴装:YES端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:NO LEAD端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDMA7628 数据手册

 浏览型号FDMA7628的Datasheet PDF文件第2页浏览型号FDMA7628的Datasheet PDF文件第3页浏览型号FDMA7628的Datasheet PDF文件第4页浏览型号FDMA7628的Datasheet PDF文件第5页浏览型号FDMA7628的Datasheet PDF文件第6页浏览型号FDMA7628的Datasheet PDF文件第7页 
May 2012  
FDMA7628  
Single N-Channel 1.5 V Specified PowerTrench® MOSFET  
20 V, 9.4 A, 14.5 mΩ  
Features  
General Description  
„ Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 9.4 A  
„ Max rDS(on) = 18.2 mΩ at VGS = 2.5 V, ID = 8.3 A  
„ Max rDS(on) = 23.3 mΩ at VGS = 1.8 V, ID = 7.3 A  
„ Max rDS(on) = 32.3 mΩ at VGS = 1.5 V, ID = 6.2 A  
This Single N-Channel MOSFET has been designed using  
Fairchild Semiconductor’s advanced Power Trench® process to  
optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET  
leadframe.  
„ Low Profile-0.8 mm maximum in the new package MicroFET  
Applications  
2x2 mm  
„ Li-lon Battery Pack  
„ DC-DC Buck Converters  
„ RoHS Compliant  
Pin 1  
G
D
D
Bottom Drain Contact  
D
D
S
D
D
Drain  
Source  
G
D
D
S
MicroFET 2X2 (Bottom View)  
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted  
Symbol  
VDS  
VGS  
Parameter  
Ratings  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
20  
V
V
±8  
9.4  
-Continuous  
-Pulsed  
Power Dissipation  
Power Dissipation  
TA = 25 °C  
(Note 1a)  
ID  
A
54  
TA = 25 °C  
TA = 25 °C  
(Note 1a)  
(Note 1b)  
1.9  
PD  
W
0.7  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
Thermal Characteristics  
RθJA  
RθJA  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Ambient  
(Note 1a)  
(Note 1b)  
65  
°C/W  
180  
Package Marking and Ordering Information  
Device Marking  
Device  
Package  
Reel Size  
7 ’’  
Tape Width  
12 mm  
Quantity  
104  
FDMA7628  
MicroFET 2X2  
3000 units  
©2012 Fairchild Semiconductor Corporation  
FDMA7628 Rev.C  
1
www.fairchildsemi.com  

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