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FDMA430NZ PDF预览

FDMA430NZ

更新时间: 2024-01-28 14:27:56
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管脉冲光电二极管PC
页数 文件大小 规格书
7页 641K
描述
Single N-Channel 2.5V Specified PowerTrench㈢ MOSFET 30V, 5.0A, 40mз

FDMA430NZ 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:MLP
包装说明:SMALL OUTLINE, S-PDSO-N6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.71
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):5 A
最大漏极电流 (ID):5 A最大漏源导通电阻:0.05 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:S-PDSO-N6
JESD-609代码:e4湿度敏感等级:1
元件数量:1端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:SQUARE
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):2.4 W
最大脉冲漏极电流 (IDM):20 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:NO LEAD
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

FDMA430NZ 数据手册

 浏览型号FDMA430NZ的Datasheet PDF文件第2页浏览型号FDMA430NZ的Datasheet PDF文件第3页浏览型号FDMA430NZ的Datasheet PDF文件第4页浏览型号FDMA430NZ的Datasheet PDF文件第5页浏览型号FDMA430NZ的Datasheet PDF文件第6页浏览型号FDMA430NZ的Datasheet PDF文件第7页 
September 2006  
FDMA430NZ  
tm  
®
Single N-Channel 2.5V Specified PowerTrench MOSFET  
30V, 5.0A, 40mΩ  
General Description  
Features  
This Single N-Channel MOSFET has been designed using  
Fairchild Semiconductor’s advanced Power Trench process  
to optimize the RDS(on) @VGS=2.5V on special MicroFET  
leadframe.  
„ RDS(on) = 40m@ VGS = 4.5 V, ID = 5.0A  
„ RDS(on) = 50m@ VGS = 2.5 V, ID = 4.5A  
„ Low Profile-0.8mm maximum-in the new package  
MicroFET 2x2 mm  
Applications  
„ Li-lon Battery Pack  
„ RoHS Compliant  
Pin 1  
G
D
D
G
4
5
6
3
2
1
S
D
D
Drain  
Source  
D
D
Bottom Drain Contact  
D
S
D
MicroFET 2X2 (Bottom View)  
Absolute Maximum Ratings TA = 25°C unless otherwise noted  
Symbol  
VDSS  
VGSS  
Parameter  
Ratings  
30  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
±12  
5.0  
20  
Drain Current -Continuous  
-Pulsed  
(Note 1a)  
ID  
A
0.9  
Power dissipation (Steady State)  
(Note 1a)  
(Note 1b)  
PD  
W
2.4  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 to +150  
oC  
Thermal Characteristics  
RθJA  
RθJA  
Thermal Resistance, Junction-to-Ambient  
(Note 1a)  
(Note 1b)  
145  
52  
oC/W  
Thermal Resistance, Junction-to-Ambient  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape Width  
Quantity  
430  
FDMA430NZ  
7”  
12mm  
3000 units  
©2006 Fairchild Semiconductor Corporation  
FDMA430NZ Rev B1  
1
www.fairchildsemi.com  

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