Datasheet > FDMA430NZ_0609

FDMA430NZ_0609

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	641K
描述
Single N-Channel 2.5V Specified PowerTrench㈢ MOSFET 30V, 5.0A, 40mз

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FDMA430NZ_0609 数据手册

September 2006

FDMA430NZ

Single N-Channel 2.5V Specified PowerTrench MOSFET

30V, 5.0A, 40mΩ

General Description

Features

This Single N-Channel MOSFET has been designed using

Fairchild Semiconductor’s advanced Power Trench process

to optimize the R_DS(on) @V_GS=2.5V on special MicroFET

leadframe.

R_DS(on)= 40mΩ @ V_GS= 4.5 V, I_D= 5.0A

R_DS(on)= 50mΩ @ V_GS= 2.5 V, I_D= 4.5A

Low Profile-0.8mm maximum-in the new package

MicroFET 2x2 mm

Applications

Li-lon Battery Pack

RoHS Compliant

Pin 1

Drain

Source

Bottom Drain Contact

MicroFET 2X2 (Bottom View)

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

V_DSS

V_GSS

Parameter

Ratings

Units

Drain-Source Voltage

Gate-Source Voltage

±12

5.0

Drain Current -Continuous

-Pulsed

(Note 1a)

I_D

0.9

Power dissipation (Steady State)

(Note 1a)

(Note 1b)

P_D

2.4

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

^oC

Thermal Characteristics

R_θJA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1b)

145

^oC/W

Thermal Resistance, Junction-to-Ambient

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape Width

Quantity

430

FDMA430NZ

7”

12mm

3000 units

FDMA430NZ Rev B1

www.fairchildsemi.com

12 3 4 5 6 7

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