Datasheet > FDMA510PZ

FDMA510PZ

更新时间： 2024-01-24 20:31:21

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	247K
描述
单 P 沟道 PowerTrench® MOSFET -20V，-7.8A，30mΩ

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DATA SHEET

www.onsemi.com

MOSFET – Single, P-Channel,

POWERTRENCH⁾

MAX

DS(on)

−20 V

30 mW @ −4.5 V

−7.8 A

37 mW @ −2.5 V

50 mW @ −1.8 V

90 mW @ −1.5 V

-20 V, -7.8 A, 30 mW

FDMA510PZ

Pin 1

Drain

Source

General Description

This device is designed specifically for battery charge or load

switching in cellular handset and other ultraportable applications. It

features a MOSFET with low on−state resistance.

The MicroFET t 2x2 package offers exceptional thermal

performance for its physical size and is well suited to linear mode

applications.

Bottom

WDFN6 2x2, 0.65P

(MicroFET 2x2)

CASE 511CZ

Features

• Max R

= 30 mW at V = −4.5 V, I = −7.8 A

GS D

DS(on)

= 37 mW at V = −2.5 V, I = −6.6 A

= 50 mW at V = −1.8 V, I = −5.5 A

MARKING DIAGRAM

= 90 mW at V = −1.5 V, I = −2.0 A

• Low Profile − 0.8 mm Maximum in the New Package MicroFET

2x2 mm

&Z&2&K

510

• HBM ESD Protection Level > 3 kV Typical (Note 3)

• Free from Halogenated Compounds and Antimony Oxides

• This Device is Pb−Free, Halide Free and is RoHS Compliant

&Z = Assembly Plant Code

&2 = 2−Digit Date Code

&K = 2−Digits Lot Run Traceability Code

510 = Specific Device Code

MOSFET MAXIMUM RATINGS (T = 25°C, unless otherwise noted)

Symbol

Parameter

Drain to Source Voltage

Gate to Source Voltage

Ratings

Unit

PIN ASSIGNMENT

−20

Bottom Drain Contact

Drain Current

− Continuous

− Pulsed

(Note 1a)

−7.8

−24

Power Dissipation

(Note 1a)

(Note 1b)

2.4

0.9

T , T

Operating and Storage Junction

Temperature Range

−55 to +150

°C

STG

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

ORDERING INFORMATION

†

Shipping

Package

Device

FDMA510PZ

THERMAL CHARACTERISTICS (T = 25°C, unless otherwise noted)

WDFN8

MicroFET 2X2

(Pb−Free,

3000 /

Tape & Reel

Symbol

Parameter

Ratings

Unit

Halide Free)

Thermal Resistance, Junction to Ambient

(Note 1a)

°C/W

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Thermal Resistance, Junction to Ambient

(Note 1b)

145

Publication Order Number:

April, 2023 − Rev. 3

FDMA510PZ/D

12 3 4 5 6 7

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