Datasheet > FDMA410NZT-F130

FDMA410NZT-F130

更新时间： 2023-09-03 20:31:56

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	419K
描述
超薄 N 沟道，1.5 V，PowerTrench® MOSFET，20V，9.5A，23mΩ

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FDMA410NZT-F130 数据手册

FDMA410NZT

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

DYNAMIC CHARACTERISTICS

Input Capacitance

= 10 V, V = 0 V, f = 1 MHz

−

935

122

1310

170

118

3.0

iss

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

oss

−

rss

f = 1 MHz

0.1

1.4

SWITCHING CHARACTERISTICS

Turn−on Delay Time

Rise Time

= 10 V, I = 9.5 A, V_GS= 4.5 V,

GEN

−

8.5

3.0

−

d(on)

= 6 W

Turn−off Delay Time

Fall Time

d(off)

3.3

Total Gate Charge

Gate to Source Charge

Gate to Drain “Miller” Charge

= 4.5 V, V = 10 V, I = 9.5 A

1.2

2.0

−

DRAIN−SOURCE DIODE CHARACTERISTICS

Maximum Continuous Drain−Source Diode Forward Current

−

2.0

1.2

Source to Drain Diode Forward Voltage

Reverse Recovery Time

= 0 V, I = 2 A (Note 2)

0.7

I = 9.5 A, di/dt = 100 A/ms

Reverse Recovery Charge

4.5

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

NOTES:

1. R

is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. R_θ_JAis determined by

the user’s board design.

a) 52°C/W when mounted on

b) 145°C/W when mounted on

a 1 in pad of 2 oz copper.

a minimum pad of 2 oz copper.

2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.

3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

4. Pulsed Id please refer to Figure 11 SOA curve for more details.

www.onsemi.com

1 234 5 6 7 8

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