Datasheet > FDMA1028NZ

FDMA1028NZ

更新时间： 2024-01-22 10:51:03

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管开关光电二极管
页数	文件大小	规格书
7页	120K
描述
Dual N-Channel PowerTrench MOSFET

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FDMA1028NZ 数据手册

May 2006

FDMA1028NZ

Dual N-Channel PowerTrench^®MOSFET

General Description

Features

This device is designed specifically as a single package

solution for dual switching requirements in cellular

handset and other ultra-portable applications. It

features two independent N-Channel MOSFETs with

low on-state resistance for minimum conduction losses.

The MicroFET 2x2 package offers exceptional thermal

performance for its physical size and is well suited to

linear mode applications.

• 3.7 A, 20V.

R_DS(ON)= 68 mΩ @ V_GS= 4.5V

R_DS(ON)= 86 mΩ @ V_GS= 2.5V

• Low profile – 0.8 mm maximum – in the new package

MicroFET 2x2 mm

• RoHS Compliant

PIN 1

S1 G1 D2

D1 G2 S2

MicroFET 2x2

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DS

Parameter

Drain-Source Voltage

Ratings

Units

V_GS

Gate-Source Voltage

±12

Drain Current – Continuous

– Pulsed

(Note 1a)

3.7

I_D

1.4

P_D

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

0.7

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1b)

(Note 1c)

(Note 1d)

86 (Single Operation)

173 (Single Operation)

69 (Dual Operation)

151 (Dual Operation)

R_θJA

Thermal Resistance, Junction-to-Ambient

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

028

FDMA1028NZ

7’’

8mm

3000 units

FDMA1028NZ Rev B (W)

12 3 4 5 6 7

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