Datasheet > FDMA1023PZ_08

FDMA1023PZ_08

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	469K
描述
Dual P-Channel PowerTrench㈢ MOSFET

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FDMA1023PZ_08 数据手册

Typical Characteristics T_J= 25°C unless otherwise noted

2.6

2.2

1.8

1.4

1.0

0.6

= -1.8V

= -4.5V

V_GS= -1.5V

= -3.0V

= -2.5V

= -2.0V

V_GS= -1.8V

V_GS= -2.0V

V_GS= -3.0V

= -1.5V

V_GS= -2.5V

PULSE DURATION = 300µs

DUTY CYCLE = 2.0%MAX

V_GS= -4.5V

PULSE DURATION = 300µs

DUTY CYCLE = 2.0%MAX

0.0

0.5

1.0

1.5

2.0

-I , DRAIN CURRENT(A)

-V , DRAIN TO SOURCE VOLTAGE (V)

Figure 1. On Region Characteristics

Figure2. N o r m a l i z e d O n - R e s i s ta n c e

vs Drain Current and Gate Voltage

1.6

200

I_D= -3.7A

PULSE DURATION = 300µs

DUTY CYCLE = 2.0%MAX

= -1.85A

V_GS= -4.5V

1.4

160

120

1.2

1.0

0.8

0.6

= 125^oC

= 25^oC

-50 -25

100 125 150

T_J, JUNCTION TEMPERATURE (^oC)

-V_GS, GATE TO SOURCE VOLTAGE (V)

F ig u re 3. No rmal i zed O n-Re si stan ce

vs Junction Temperature

Figure4. On-Resistance vs Gate to

Source Voltage

V_GS= 0V

PULSE DURATION = 300µs

DUTY CYCLE = 2.0%MAX

0.1

T = 125^oC

V_DD= -5V

= 25^oC

0.01

1E-3

1E-4

T = 125^oC

= -55^oC

0.8

= 25^oC

= -55^oC

0.0

0.5

1.0

1.5

2.0

0.0

0.2

0.4

0.6

1.0

1.2

1.4

-V_GS, GATE TO SOURCE VOLTAGE (V)

-V , BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure6. Source to Drain Diode

Forward Voltage vs Source Current

www.fairchildsemi.com

FDMA1023PZ Rev.C2

1 2 345 6 7

下载PDF

与FDMA1023PZ_08相关器件

型号	品牌	描述	获取价格	数据表
FDMA1023PZ-F106	ONSEMI	双 P 沟道，Power Trench® MOSFET，-20V，-3.7A，72mΩ	获取价格
FDMA1024NZ	FAIRCHILD	Dual N-Channel PowerTrench㈢ MOSFET 20 V, 5.0	获取价格
FDMA1024NZ	ONSEMI	双 N 沟道，PowerTrench® MOSFET，20V，5.0A，54mΩ	获取价格
FDMA1025P	FAIRCHILD	Dual P-Channel PowerTrench MOSFET -20V, -3.1A, 105mohm	获取价格
FDMA1025P	ONSEMI	双 P 沟道，Power Trench® MOSFET，-20V，-3.1A，155mΩ	获取价格
FDMA1025P_08	FAIRCHILD	Dual P-Channel PowerTrench㈢ MOSFET	获取价格