Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = –250µA, VGS = 0V
–20
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
I
D = –250µA, referenced to 25°C
–11
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = –16V, VGS = 0V
VGS = ±8V, VDS = 0V
–1
µA
µA
±10
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = –250µA
–0.4
–0.7
2.5
–1.0
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = –250µA, referenced to 25°C
mV/°C
V
GS = –4.5V, ID = –3.7A
60
75
72
95
VGS = –2.5V, ID = –3.2A
VGS = –1.8V, ID = –2.0A
VGS = –1.5V, ID = –1.0A
VGS = –4.5V, ID = –3.7A,TJ =125°C
VDS = –5V, ID = –3.7A
rDS(on)
Static Drain to Source On-Resistance
Forward Transconductance
100
130
81
130
195
91
mΩ
gFS
12
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
490
100
90
655
135
135
pF
pF
pF
VDS = –10V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
9
18
22
ns
ns
VDD = –10V, ID = –1A
VGS = –4.5V, RGEN = 6Ω
12
64
37
8.6
0.7
2.0
Turn-Off Delay Time
Fall Time
103
60
ns
ns
Qg(TOT)
Qgs
Qgd
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
12
nC
nC
nC
V
DD = –10V, ID = –3.7A
VGS = –4.5V
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain-Source Diode Forward Current
–1.1
–1.2
48
A
V
VSD
trr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, IS = –1.1A (Note 2)
–0.8
32
ns
nC
IF = –3.7A, di/dt = 100A/µs
Qrr
Reverse Recovery Charge
15
23
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2
FDMA1023PZ Rev.C2