Datasheet > FDMA1032CZ_08

FDMA1032CZ_08

更新时间： 2024-11-09 03:36:27

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	1115K
描述
20V Complementary PowerTrench㈢ MOSFE

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FDMA1032CZ_08 数据手册

March 2008

FDMA1032CZ

20V Complementary PowerTrench^®MOSFET

General Description

Features

• Q1: N-Channel

This device is designed specifically as a single package

solution for a DC/DC 'Switching' MOSFET in cellular

handset and other ultra-portable applications. It

3.7 A, 20V.

R_DS(ON)= 68 mΩ @ V_GS= 4.5V

R_DS(ON)= 86 mΩ @ V_GS= 2.5V

• Q2: P-Channel

features an independent N-Channel

& P-Channel

–3.1 A, –20V. R_DS(ON)= 95 mΩ @ V_GS= –4.5V

R_DS(ON)= 141 mΩ @ V_GS= –2.5V

MOSFET with low on-state resistance for minimum

conduction losses. The gate charge of each MOSFET

is also minimized to allow high frequency switching

directly from the controlling device. The MicroFET 2x2

package offers exceptional thermal performance for its

physical size and is well suited to switching applications.

• Low profile – 0.8 mm maximum – in the new package

MicroFET 2x2 mm

• HBM ESD protection level > 2kV (Note 3)

• RoHS Compliant

PIN 1

S1 G1 D2

S1 1

D1 G2 S2

MicroFET 2x2

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DS

Parameter

Drain-Source Voltage

–20

±12

–3.1

–6

Units

V_GS

Gate-Source Voltage

±12

3.7

Drain Current – Continuous

– Pulsed

(Note 1a)

I_D

P_D

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

1.4

0.7

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1b)

(Note 1c)

(Note 1d)

86 (Single Operation)

173 (Single Operation)

69 (Dual Operation)

151 (Dual Operation)

R_θJA

Thermal Resistance, Junction-to-Ambient

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

032

FDMA1032CZ

7’’

8mm

3000 units

FDMA1032CZ Rev B2 (W)

12 3 4 5 6 7...9

中文翻译

下载PDF

与FDMA1032CZ_08相关器件

型号	品牌	获取价格	描述	数据表
FDMA1430JP	FAIRCHILD	获取价格	Max rDS(on) = 90 mÎ© at VGS = -4.5 V, ID = -2
FDMA1430JP	ONSEMI	获取价格	集成式 P 沟道，Power Trench® MOSFET 和 BJT，-30V，-2.9
FDMA2002NZ	FAIRCHILD	获取价格	Dual N-Channel PowerTrench MOSFET
FDMA2002NZ	ONSEMI	获取价格	双 N 沟道 PowerTrench® MOSFET 30V，2.9A，123mΩ
FDMA2002NZ_08	FAIRCHILD	获取价格	Dual N-Channel PowerTrench㈢ MOSFET
FDMA291P	FAIRCHILD	获取价格	Single P-Channel 1.8V Specified PowerTrench MOSFET
FDMA291P	ONSEMI	获取价格	P 沟道，PowerTrench® MOSFET， 1.8V 指定，-20V，-6.6A，
FDMA291P_08	FAIRCHILD	获取价格	Single P-Channel 1.8V Specified PowerTrench㈢
FDMA3023PZ	FAIRCHILD	获取价格	Dual P-Channel PowerTrench® MOSFET -30 V, -2.
FDMA3023PZ	ONSEMI	获取价格	双 P 沟道 PowerTrench® MOSFET -30V，-2.9A，90mΩ