Datasheet > FDMA1027P_08

FDMA1027P_08

更新时间： 2024-09-17 03:36:27

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	680K
描述
Dual P-Channel PowerTrench㈢ MOSFET

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FDMA1027P_08 数据手册

September 2008

FDMA1027P

Dual P-Channel PowerTrench MOSFET

General Description

Features

This device is designed specifically as a single package

solution for the battery charge switch in cellular handset

and other ultra-portable applications. It features two

independent P-Channel MOSFETs with low on-state

-3.0 A, -20V. R_DS(ON)= 120 mΩ @ V_GS= -4.5 V

R_DS(ON)= 160 mΩ @ V_GS= -2.5 V

resistance for minimum conduction losses.

connected in the typical common source configuration,

bi-directional current flow is possible.

When

R_DS(ON)= 240 mΩ @ V_GS= -1.8 V

Low Profile - 0.8 mm maximun - in the new package

The MicroFET 2x2 package offers exceptional thermal

performance for it's physical size and is well suited to linear

mode applications.

MicroFET 2x2 mm

RoHS Compliant

PIN1

G1 D2

MicroFET 2X2

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

G2 S2

Symbol

V_DSS

V_GSS

Parameter

MOSFET Drain-Source Voltage

Ratings

Units

-20

MOSFET Gate-Source Voltage

±8

-3.0

Drain Current -Continuous

-Pulsed

(Note 1a)

I_D

-6

1.4

Power dissipation for Single Operation

(Note 1a)

(Note 1b)

P_D

0.7

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

^oC

Thermal Characteristics

R_θJA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

86 (Single Operation)

Thermal Resistance, Junction-to-Ambient

(Note 1b) 173 (Single Operation)

69 (Dual Operation)

^oC/W

151 (Dual Operation)

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape Width

Quantity

027

FDMA1027P

8mm

3000 units

FDMA1027P Rev.D2 (W)

12 3 4 5 6 7

中文翻译

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