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FDMA008P20LZ PDF预览

FDMA008P20LZ

更新时间： 2024-01-06 12:46:06
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 411K
描述
单 P 沟道 PowerTrench® MOSFET -20V，-2.5A，13mΩ

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FDMA008P20LZ 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：,Reach Compliance Code：not_compliant
Factory Lead Time：20 weeks风险等级：1.55
JESD-609代码：e3湿度敏感等级：1
峰值回流温度（摄氏度）：NOT SPECIFIED端子面层：Tin (Sn)
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

FDMA008P20LZ 数据手册

 浏览型号FDMA008P20LZ的Datasheet PDF文件第1页浏览型号FDMA008P20LZ的Datasheet PDF文件第3页浏览型号FDMA008P20LZ的Datasheet PDF文件第4页浏览型号FDMA008P20LZ的Datasheet PDF文件第5页浏览型号FDMA008P20LZ的Datasheet PDF文件第6页浏览型号FDMA008P20LZ的Datasheet PDF文件第7页 
FDMA008P20LZ  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
C
Symbol  
Parameter  
Test Conditions  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
BV  
Drain to Source Breakdown Voltage  
I
I
= −250 mA, V = 0 V  
−20  
V
DSS  
D
GS  
DBV  
Breakdown Voltage Temperature  
Coefficient  
= −250 mA,  
−16  
mV/°C  
DSS  
D
referenced to 25°C  
DT  
J
DSS  
GSS  
I
Zero Gate Voltage Drain Current  
Gate to Source Leakage Current  
V
V
= −16 V, V = 0 V  
−1  
1
mA  
mA  
DS  
GS  
I
= 8 V, V = 0 V  
DS  
GS  
ON CHARACTERISTICS  
V
Gate to Source Threshold Voltage  
V
I
= V , I = −250 mA  
−0.4  
−0.65  
3
−1.4  
V
GS(th)  
GS  
DS  
D
DV  
Gate to Source Threshold Voltage  
Temperature Coefficient  
= −250 mA,  
mV/°C  
GS(th)  
D
referenced to 25°C  
DT  
J
V
GS  
V
GS  
V
GS  
V
GS  
V
GS  
= −4.5 V, I = −2.5 A  
10  
12  
13  
16  
20  
30  
r
Static Drain to Source On Resistance  
mW  
D
DS(on)  
= −2.5 V, I = −1.4 A  
D
= −1.8 V, I = −1.0 A  
15  
D
= −1.5 V, I = −0.85 A  
20  
D
= −4.5 V, I = −2.5 A,  
12.8  
D
T = 125°C  
J
g
FS  
Forward Transconductance  
V
DS  
= −5 V, I = −2.5 A  
26  
S
D
DYNAMIC CHARACTERISTICS  
C
Input Capacitance  
3131  
424  
386  
13  
4383  
594  
540  
25  
V
= −10 V, V = 0 V,  
pF  
iss  
DS  
GS  
f = 1 MHz  
C
Output Capacitance  
Reverse Transfer Capacitance  
Gate Resistance  
oss  
C
rss  
R
W
g
SWITCHING CHARACTERISTICS  
t
Turn−On Delay Time  
Rise Time  
12  
17  
21  
30  
V
DD  
V
GS  
= −10 V, I = −2.5 A,  
ns  
d(on)  
D
= −4.5 V, R  
= 6 W  
GEN  
t
r
t
Turn−Off Delay Time  
Fall Time  
239  
96  
382  
153  
39  
d(off)  
t
f
Q
Total Gate Charge  
Gate to Source Gate Charge  
Gate to Drain “Miller” Charge  
28  
V
= −4.5 V, V = −10 V, I  
D
nC  
g
GS  
DD  
= −2.5 A  
Q
3.6  
6.2  
gs  
gd  
Q
DRAIN−SOURCE DIODE CHARACTERISTICS  
V
V
= 0 V, I = −2 A (Note 2)  
−0.6  
−0.8  
28  
−1.2  
−1.3  
46  
V
V
V
Source to Drain Diode Forward Voltage  
GS  
S
SD  
= 0 V, I = −2.5 A (Note 2)  
GS  
S
t
Reverse Recovery Time  
ns  
nC  
I = −6.8 A,  
rr  
F
di/dt = 100 A/mS  
Q
Reverse Recovery Charge  
10  
17  
rr  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
1. R  
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder  
q
JA  
mounting surface of the drain pins.  
a. 52 °C/W when mounted on  
b. 145 °C/W when mounted on  
a minimum pad of 2 oz copper  
2
a 1 in pad of 2 oz copper  
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.  
3. The diode connected between the gate and the source serves only as protection against ESD. No gate overvoltage rating is implied.  
4. E of 54 mJ is based on starting T = 25°C, L = 3 mH, I = 6 A, V = 20 V, V = 4.5 V. 100% test at L = 0.1 mH, I = 19 A.  
AS  
J
AS  
DD  
GS  
AS  
5. Pulsed Id please refer to Figure 10. SOA curve for more details.  
www.onsemi.com  
2
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