DATA SHEET
www.onsemi.com
MOSFET – Single, N-Channel,
POWERTRENCH)
V
R
MAX
I
D MAX
DS
DS(on)
80 V
6 A
36.5 mW @ 10 V
80 V, 6 A, 36.5 mW
Single N−Channel
Bottom Drain Contact
FDMA037N08LC
D
D
1
6
Description
2
3
5
4
D
G
D
S
This device has been designed to provide maximum efficiency and
thermal performance for synchronous buck converters. The low
R
DS(on)
and gate charge provide excellent switching performance.
Features
PTNG MOSFET Technology
Max R
Max R
= 36.5 mW at V = 10 V, I = 4 A
DS(on)
GS D
= 56.9 mW at V = 4.5 V, I = 3 A
DS(on)
GS
D
5 V Drive Capable
50% Lower Q than Other MOSFET Suppliers
rr
Lower Switching Noise/EMI
Low Profile − 0.8 mm Maximum in the New Package MicroFETt
2x2 mm
WDFN6 2x2, 0.65P
CASE 511DB
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MARKING DIAGRAM
Typical Applications
DC−DC Buck Converters
&Z&2&K
037L
&Z
&2
&K
= Assembly Plant Code
= Numeric Date Code
= Lot Code
037L
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
April, 2023 − Rev. 3
FDMA037N08LC/D