Datasheet > FDM84100

FDM84100

更新时间： 2024-02-03 03:30:47

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	234K
描述
Power Field-Effect Transistor

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技术参数
数据手册

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FDM84100 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.76
Base Number Matches：	1

FDM84100 数据手册

Electrical Characteristics T_J= 25 °C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BV_DSS

Drain to Source Breakdown Voltage

I_D= 250 μA, V_GS= 0 V

100

ΔBV_DSS

ΔT_J

Breakdown Voltage Temperature

Coefficient

_D= 250 μA, referenced to 25 °C

mV/°C

I_DSS

I_GSS

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

V_DS= 80 V, V_GS= 0 V

V_GS= ±20 V, V_DS= 0 V

μA

±100

On Characteristics

V_GS(th)

Gate to Source Threshold Voltage

V_GS= V_DS, I_D= 250 μA

3.1

-9

ΔV_GS(th)

ΔT_J

Gate to Source Threshold Voltage

Temperature Coefficient

_D= 250 μA, referenced to 25 °C

V_GS= 10 V, I_D= 7 A

_GS= 6 V, I_D= 5.5 A

mV/°C

r_DS(on)

g_FS

Static Drain to Source On Resistance

Forward Transconductance

mΩ

V_GS= 10 V, I_D= 7 A, T_J= 125 °C

V_DD= 5 V, I_D= 7 A

Dynamic Characteristics

C_iss

C_oss

C_rss

R_g

Input Capacitance

734

168

6.6

980

225

V_DS= 50 V, V_GS= 0 V

f = 1 MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

0.1

1.3

Switching Characteristics

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

Rise Time

8.4

2.6

V_DD= 50 V, I_D= 7 A

V_GS= 10 V, R_GEN= 6 Ω

Turn-Off Delay Time

Fall Time

2.8

Total Gate Charge

Gate to Source Charge

Gate to Drain “Miller” Charge

V_GS= 0 V to 10 V

V_GS= 0 V to 6 V

Q_g(TOT)

7.3

3.4

2.5

V_DD= 50 V

_D= 7 A

Q_gs

Q_gd

Drain-Source Diode Characteristics

V_SD

t_rr

Source to Drain Diode Forward Voltage

Reverse Recovery Time

V_GS= 0 V, I_S= 7 A

(Note 2)

0.8

1.2

I_F= 7 A, di/dt = 100 A/μs

Q_rr

Reverse Recovery Charge

NOTES:

1. R

is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

is guaranteed by design while R

is determined by

θCA

θJA

θJC

the user's board design.

b.160 °C/W when mounted on

a minimum pad of 2 oz copper

a. 60 °C/W when mounted on

a 1 in padof 2oz copper

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.

3. E of 121 mJ is based on starting T = 25 C, L = 3 mH, I = 9 A, V = 100 V, V = 10 V. 100% tested at L = 0.1 mH, I = 30 A.

4. Pulse Id refers to Figure.11 Forward Bias Safe Operation Area.

www.fairchildsemi.com

FDMD84100 Rev.C

123 4 5 6 7

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