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FDMA008P20LZ PDF预览

FDMA008P20LZ

更新时间: 2024-01-08 10:54:19
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 411K
描述
单 P 沟道 PowerTrench® MOSFET -20V,-2.5A,13mΩ

FDMA008P20LZ 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:,Reach Compliance Code:not_compliant
Factory Lead Time:20 weeks风险等级:1.55
JESD-609代码:e3湿度敏感等级:1
峰值回流温度(摄氏度):NOT SPECIFIED端子面层:Tin (Sn)
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

FDMA008P20LZ 数据手册

 浏览型号FDMA008P20LZ的Datasheet PDF文件第2页浏览型号FDMA008P20LZ的Datasheet PDF文件第3页浏览型号FDMA008P20LZ的Datasheet PDF文件第4页浏览型号FDMA008P20LZ的Datasheet PDF文件第5页浏览型号FDMA008P20LZ的Datasheet PDF文件第6页浏览型号FDMA008P20LZ的Datasheet PDF文件第7页 
MOSFET - Power, Single  
P-Channel, POWERTRENCH)  
−20 V, −11 A, 13 mW  
FDMA008P20LZ  
General Description  
This device is designed specifically for battery charge or load  
switching in cellular handset and other ultraportable applications. It  
features a MOSFET with low on−state resistance and zener diode  
protection against ESD.  
www.onsemi.com  
Bottom Drain Contact  
The WDFN6 (MicroFET 2.05×2.05) package offers exceptional  
thermal performance for its physical size and is well suited to linear  
mode applications.  
1
6
D
D
G
D
D
S
2
3
5
4
Features  
Max r  
Max r  
Max r  
Max r  
= 13 mW at V = −4.5 V, I = 2.5 A  
GS D  
DS(on)  
DS(on)  
DS(on)  
DS(on)  
= 16 mW at V = −2.5 V, I = 1.4 A  
GS  
D
= 20 mW at V = −1.8 V, I = 1.0 A  
GS  
D
= 30 mW at V = −1.5 V, I = 0.85 A  
GS  
D
D
D
Low Profile − 0.8 mm Maximum − in the New Package WDFN6  
S
Pin 1  
(MicroFET 2.05 × 2.05 mm)  
Drain  
HBM ESD Protection Level > 1 kV Typical (Note 3)  
Free from Halogenated Compounds and Antimony Oxides  
RoHS Compliant  
Source  
D
D
G
(Bottom View)  
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
WDFN6 2.05x2.05, 0.65P  
CASE 483AV  
A
Symbol  
Parameter  
Drain to Source Voltage  
Gate to Source Voltage  
Ratings  
−20  
8
Unit  
V
V
DS  
V
GS  
MARKING DIAGRAM  
V
I
Drain Current  
Continuous (Note 1a)  
Pulsed (Note 5)  
Single Pulse Avalanche Energy (Note 4)  
−11  
−164  
54  
A
D
&2&K  
&Z008  
E
AS  
mJ  
W
P
Power  
Dissipation  
(Note 1a)  
(Note 1b)  
2.4  
D
0.9  
&2 = Date Code  
&K = Lot Code  
&Z = Assembly Plant Code  
008 = Specific Device Code  
T , T  
Operating and Storage Junction  
Temperature Range  
−55 to  
+150  
°C  
J
STG  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
ORDERING INFORMATION  
THERMAL CHARACTERITICS  
Device  
Marking  
Symbol  
Parameter  
Ratings  
52  
Unit  
{
Device  
Package  
Shipping  
R
Thermal Resistance,  
Junction to Ambient  
(Note 1a)  
(Note 1b)  
°C/W  
q
JA  
008  
FDMA008P20LZ  
WDFN6  
3000 Units/  
Tape & Reel  
(Pb−Free)  
145  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
December, 2020 − Rev. 2  
FDMA008P20LZ/D  

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