CZT3055NPN

更新时间： 2024-10-31 22:18:35

品牌	Logo	应用领域
CENTRAL		晶体晶体管
页数	文件大小	规格书
2页	76K
描述
2.0W SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTOR

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CZT3055NPN 数据手册

CZT2955 PNP

CZT3055 NPN

Central

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CZT2955

and CZT3055 types are surface mount epoxy

molded complementary silicon transistors

manufactured by the epitaxial base process,

designed for surface mounted power amplifier

applications up to 6.0 amps.

Semiconductor Corp.

2.0W SURFACE MOUNT

COMPLEMENTARY SILICON

POWER TRANSISTOR

MARKING CODE: FULL PART NUMBER

SOT-223 CASE

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

100

CBO

CER

CEO

EBO

7.0

6.0

3.0

2.0

Base Current

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Resistance

T ,T

stg

-65 to +150

62.5

°C

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

µA

=30V

700

1.0

5.0

CEO

CEV

EBO

=100V, V =1.5V

=7.0V

* V

I =30mA, R =100Ω

CER

CEO

I =30mA

I =4.0A, I =400mA

1.1

1.5

CE(SAT)

BE(ON)

=4.0V, I =4.0A

* h

=4.0V, I =4.0A

5.0

2.5

=4.0V, I =6.0A

=10V, I =500mA, f=1.0MHz

MHz

* Pulsed, 2% D.C.

R3 (17-June 2004)

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