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CZT3090LBK PDF预览

CZT3090LBK

更新时间: 2024-11-01 21:19:31
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
2页 75K
描述
Transistor

CZT3090LBK 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:5.61
最大集电极电流 (IC):3 A配置:Single
最小直流电流增益 (hFE):175最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):2 W
子类别:Other Transistors表面贴装:YES
标称过渡频率 (fT):100 MHzBase Number Matches:1

CZT3090LBK 数据手册

 浏览型号CZT3090LBK的Datasheet PDF文件第2页 
TM  
CZT3090L  
Central  
Semiconductor Corp.  
SURFACE MOUNT  
LOW V  
CE(SAT)  
NPN SILICON POWER TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CZT3090L is  
a Low V  
NPN Transistor in a space  
CE(SAT)  
saving Power SOT-223 surface mount package,  
designed for DC-DC converters for mobile  
systems and LAN cards, motor control, power  
management and strobe flash units.  
MARKING CODE: FULL PART NUMBER  
SOT-223 CASE  
MAXIMUM RATINGS: (T =25°C)  
A
SYMBOL  
UNITS  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Peak Pulse Current  
V
V
V
45  
15  
6.0  
3.0  
6.0  
2.0  
V
V
V
A
A
W
CBO  
CEO  
EBO  
I
C
I
CM  
Power Dissipation  
P
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
T ,T  
J stg  
-65 to +150  
62.5  
°C  
°C/W  
Θ
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
100  
100  
UNITS  
nA  
nA  
V
V
V
mV  
mV  
mV  
mV  
I
I
V
V
=20V  
=5.0V  
CBO  
EBO  
CB  
EB  
BV  
BV  
BV  
I =10µA  
45  
15  
6.0  
CBO  
CEO  
EBO  
C
I =10mA  
C
I =10µA  
E
V
V
V
V
I =100mA, I =1.0mA  
30  
60  
85  
50  
CE(SAT)  
CE(SAT)  
CE(SAT)  
CE(SAT)  
FE  
C
B
I =1.0A, I =20mA  
150  
200  
300  
C
B
B
B
I =2.0A, I =200mA  
C
I =3.0A, I =60mA  
145  
C
h
h
h
V
=2.0V, I =500mA  
200  
200  
175  
CE  
CE  
CE  
CB  
CE  
C
V
V
V
V
=2.0V, I =1.0A  
C
FE  
FE  
=2.0V, I =3.0A  
C
C
=10V, f=1.0MHz  
100  
pF  
MHz  
ob  
f
=10V, I =500mA  
100  
T
C
R2 (17-June 2004)  

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