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CZT3090LE PDF预览

CZT3090LE

更新时间: 2024-09-13 09:11:47
品牌 Logo 应用领域
CENTRAL 晶体晶体管
页数 文件大小 规格书
2页 537K
描述
ENHANCED SPECIFICATION SURFACE MOUNT LOW VCE(SAT) NPN SILICON POWER TRANSISTOR

CZT3090LE 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.39外壳连接:COLLECTOR
最大集电极电流 (IC):3 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):150
JESD-30 代码:R-PDSO-G4元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

CZT3090LE 数据手册

 浏览型号CZT3090LE的Datasheet PDF文件第2页 
CZT3090LE  
ENHANCED SPECIFICATION  
www.centralsemi.com  
SURFACE MOUNT  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CZT3090LE is an  
Enhanced Specification Low V NPN Silicon  
LOW V  
NPN  
CE(SAT)  
SILICON POWER TRANSISTOR  
CE(SAT)  
Power Transistor packaged in an industry standard  
SOT-223 case. High Collector Current, coupled with a  
Low Saturation Voltage, make this an excellent choice  
for industrial and consumer applications where electrical  
and thermal operational efficiency are top priorities.  
MARKING: FULL PART NUMBER  
FEATURES:  
SOT-223 CASE  
APPLICATIONS:  
Low V  
NPN Transitor  
CE(SAT)  
High Current (I =3.0A MAX)  
C
Power Management / DC-DC Converters  
Portable and Battery Powered Products  
LAN Equipment / Motor Controllers  
V  
=0.155V TYP @ I =3.0A  
CE(SAT)  
C
SOT-223 Surface Mount Package  
Complementary PNP device: CZT7090LE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
A
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Peak Collector Current  
Power Dissipation  
Operating and Storage Junction Temperature  
Thermal Resistance  
V
V
V
60  
50  
6.0  
3.0  
5.0  
V
V
V
A
A
W
°C  
°C/W  
CBO  
CEO  
EBO  
I
C
I
CM  
P
T
2.0  
D
T
-65 to +150  
62.5  
J, stg  
Θ
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C)  
A
TEST CONDITIONS  
MIN  
TYP  
MAX  
50  
50  
UNITS  
nA  
nA  
V
V
V
mV  
mV  
mV  
mV  
SI YMBOL  
V
V
=50V  
=5.0V  
CBO  
EBO  
CB  
EB  
I
BV  
I =100μA  
60  
50  
6.0  
CBO  
CEO  
C
BV  
I =10mA  
C
BV  
I =10µA  
EBO  
CE(SAT)  
CE(SAT)  
CE(SAT)  
CE(SAT)  
FE  
E
V
V
V
I =100mA, I =1.0mA  
37  
66  
77  
50  
C
C
B
I =1.0A, I =20mA  
100  
150  
250  
B
I =2.0A, I =200mA  
C
B
B
V  
h  
I =3.0A, I =60mA  
155  
C
V
=2.0V, I =500mA  
300  
300  
150  
CE  
CE  
CE  
CB  
CE  
C
h
h
V
V
V
V
=2.0V, I =1.0A  
C
FE  
FE  
=2.0V, I =3.0A  
174  
C
C
=10V, I =0, f=1.0MHz  
E
25  
pF  
MHz  
ob  
f
=10V, I =500mA  
100  
T
C
Enhanced Specification  
R1 (1-March 2010)  

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