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CZT3120 PDF预览

CZT3120

更新时间: 2024-09-13 03:27:51
品牌 Logo 应用领域
CENTRAL 晶体开关晶体管功率双极晶体管光电二极管
页数 文件大小 规格书
2页 76K
描述
SURFACE MOUNT NPN SILICON SWITCHING POWER TRANSISTOR

CZT3120 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:SOT-223
包装说明:SOT-223, 4 PIN针数:4
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.26
外壳连接:COLLECTOR最大集电极电流 (IC):3 A
集电极-发射极最大电压:70 V配置:SINGLE
最小直流电流增益 (hFE):40JESD-30 代码:R-PDSO-G4
JESD-609代码:e0元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):8 MHz
Base Number Matches:1

CZT3120 数据手册

 浏览型号CZT3120的Datasheet PDF文件第2页 
TM  
Central  
CZT3120  
Semiconductor Corp.  
SURFACE MOUNT  
NPN SILICON SWITCHING  
POWER TRANSISTOR  
DESCRIPTION:  
The Central Semiconductor CZT3120 NPN  
Switching Power Transistor, manufactured by the  
epitaxial planar process, combines both power  
and high speed switching characteristics in a  
SOT-223 Surface Mount Package. Typical  
applications include drivers, DC-DC converters,  
and general fast switching applications.  
MARKING CODE: FULL PART NUMBER  
SOT-223 CASE  
0
MAXIMUM RATINGS (T =25 C)  
A
SYMBOL  
UNITS  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
V
V
120  
70  
V
V
CBO  
CEO  
EBO  
7.0  
3.0  
2.0  
V
I
A
C
Power Dissipation  
P
W
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
0
T , T  
stg  
-65 to +150  
62.5  
C
J
0
Θ
C/W  
JA  
0
ELECTRICAL CHARACTERISTICS(T =25 C)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
1.0  
UNITS  
I
I
V
V
=80V  
µA  
µA  
V
CBO  
EBO  
CB  
EB  
=5.0V  
1.0  
BV  
BV  
BV  
I =50µA  
120  
70  
160  
90  
CBO  
CEO  
EBO  
CE(SAT)  
BE(ON)  
FE  
C
I =10mA  
V
C
I =50µA  
7.0  
15  
V
E
V
V
I =2.0A, I =200mA  
250  
0.95  
170  
165  
75  
500  
1.1  
mV  
V
C
B
I =2.0A, V =1.0V  
C
CE  
h
h
h
V
=5.0V, I =10mA  
100  
100  
40  
CE  
CE  
CE  
CE  
C
V
V
V
=5.0V, I =500mA  
300  
FE  
C
=5.0V, I =3.0A  
FE  
C
f
=10V, I =500mA, f=1.0MHz  
8.0  
MHz  
T
C
R2 (17-June 2004)  

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