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CZT3150BKPBFREE PDF预览

CZT3150BKPBFREE

更新时间: 2024-11-01 13:07:15
品牌 Logo 应用领域
CENTRAL 晶体晶体管功率双极晶体管开关光电二极管
页数 文件大小 规格书
2页 76K
描述
Transistor,

CZT3150BKPBFREE 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.61最大集电极电流 (IC):5 A
配置:Single最小直流电流增益 (hFE):250
最高工作温度:150 °C极性/信道类型:NPN
最大功率耗散 (Abs):2 W子类别:Other Transistors
表面贴装:YESBase Number Matches:1

CZT3150BKPBFREE 数据手册

 浏览型号CZT3150BKPBFREE的Datasheet PDF文件第2页 
TM  
Central  
CZT3150  
Semiconductor Corp.  
SURFACE MOUNT  
NPN SILICON POWER TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CZT3150  
type is  
a NPN Silicon Power Transistor  
manufactured by the epitaxial planar process,  
epoxy molded in a surface mount package,  
designed for high current, high gain, fast  
switching applications.  
MARKING CODE: FULL PART NUMBER  
SOT-223 CASE  
MAXIMUM RATINGS: (T =25°C)  
A
UNITS  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
Base Current  
Power Dissipation  
V
V
V
50  
25  
7.0  
5.0  
1.0  
2.0  
V
V
CBO  
CEO  
EBO  
V
A
A
W
I
I
P
C
B
D
Operating and Storage  
Junction Temperature  
T ,T  
stg  
-65 to +150  
62.5  
°C  
°C/W  
J
Thermal Resistance  
Θ
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
1.0  
UNITS  
I
I
V
V
=50V  
µA  
µA  
V
CBO  
EBO  
CB  
EB  
=7.0V  
1.0  
BV  
I =10mA  
25  
CEO  
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
FE  
C
V
V
V
V
I =3.0A, I =150mA  
0.35  
0.50  
1.10  
1.40  
550  
V
C
B
I =4.0A, I =200mA  
V
C
B
I =3.0A, I =150mA  
V
C
B
I =4.0A, I =200mA  
V
C
B
h
h
h
V
=2.0V, I =500mA  
250  
150  
50  
CE  
CE  
CE  
CE  
CB  
C
V
V
V
V
=2.0V, I =2.0A  
C
=2.0V, I =5.0A  
FE  
FE  
C
f
=6.0V, I =50mA, f=200MHz  
150  
MHz  
pF  
T
C
C
=10V, I =0, f=1.0MHz  
50  
ob  
E
R4 (17-June 2004)  

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