Datasheet > CZT31C

CZT31C

更新时间： 2024-04-09 19:00:55

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	344K
描述
100V,3A,Medium Power NPN Bipolar Transistor

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数据手册

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CZT31C 数据手册

NPN Silicon Epitaxial Planar Transistor

CZT31C

Features



Complementary to CZT32C

Power amplifier applications up to 3A

Mechanic al Data



Case: SOT-223

Molding compound: UL flammability classification rating 94V-0

Terminals: Tin-plated; solderability per MIL-STD-202, Method 208

SOT-223

Ordering Information

Part Number

Package

SOT-223

Shipping Quantity

Marking Code

CZT31C

4000 pcs / Tape & Reel

CZT31C

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Current (Continuous)

Collector Current (Peak)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

100

I_CM

Base Current (continuous)

I_B

Thermal Characteristics

Parameter

Power Dissipation

Symbol

P_D

Value

Unit

Junction Temperature Range

Storage Temperature Range

T_J

-55 ~ +150

°C

T_STG

°C

STM0559A: August 2021

www.gmesemi.com

12 3 4

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