Datasheet > CZT31C

CZT31C

更新时间： 2024-09-16 14:52:35

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	945K
描述
SOT-223

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中文翻译

获取价格

技术参数
数据手册

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CZT31C 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.59
Base Number Matches：	1

CZT31C 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-223 Plastic-Encapsulate Transistors

SOT-223

CZT31C TRANSISTOR (NPN)

FEATURES

Complementary to CZT32C

1. BASE

Power amplifier applications up to 3.0 amps.

2. COLLECTOR

3. EMITTER

MARKING:

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

Parameter

Value

100

Unit

V_CBO

V_CEO

V_EBO

I_C

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

P_C

Collector Power Dissipation

T_J,T_stg

Operation Junction and Storage Temperature Range

-55~150

℃

ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C=1m A,I_E=0

Min

100

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=30mA,I_B=0

I_E=3mA,I_C=0

V_CB=100V,I_E=0

V_CE=60V,I_B=0

200

300

Base cut-off current

I_CEO

Emitter cut-off current

I_EBO

V_EB=5V,I_C=0

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE

f_T

V_CE=4V,I_C=1A

DC current gain

V_CE=4V,I_C=3A

100

1.2

1.8

Collector-emitter saturation voltage

Base-emitter voltage

I_C=3.0A,I_B=375mA

V_CE=4V,I_C=3A

Transition frequency

* Pulsed , 2%D.C.

V_CE=10V,I_C=500mA,f=1MHz

MHz

www.jscj-elec.com

Rev. - 2.1

12 3 4

中文翻译

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