生命周期: | Active | 包装说明: | , |
Reach Compliance Code: | compliant | 风险等级: | 5.61 |
最大集电极电流 (IC): | 5 A | 配置: | Single |
最小直流电流增益 (hFE): | 50 | 最高工作温度: | 150 °C |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 2 W |
子类别: | Other Transistors | 表面贴装: | YES |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CZT3150TRLEADFREE | CENTRAL |
获取价格 |
Transistor | |
CZT31C | CENTRAL |
获取价格 |
2.0W COMPLEMENTARY SILICON POWER TRANSISTOR | |
CZT31C | CJ |
获取价格 |
SOT-223 | |
CZT31C | BL Galaxy Electrical |
获取价格 |
100V,3A,Medium Power NPN Bipolar Transistor | |
CZT31CBKLEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
CZT31CLEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
CZT31CTR | CENTRAL |
获取价格 |
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
CZT31CTR13LEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
CZT32C | CENTRAL |
获取价格 |
2.0W COMPLEMENTARY SILICON POWER TRANSISTOR | |
CZT32C | CJ |
获取价格 |
SOT-223 |